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Quantitative in-situ TEM study of stress-assisted grain growth

Published online by Cambridge University Press:  15 April 2013

Sandeep Kumar ,
Tarek Alam  and
Aman Haque
Sandeep Kumar*
Affiliation:
Department of Mechanical Engineering and Program in Materials Science and Engineering, University of California, Riverside, California 92521
Tarek Alam
Affiliation:
Mechanical and Nuclear Engineering, Penn State University, University Park, Pennsylvania 16802
Aman Haque
Affiliation:
Mechanical and Nuclear Engineering, Penn State University, University Park, Pennsylvania 16802
*
Address all correspondence to Sandeep Kumar atskumar@engr.ucr.edu
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Abstract

We present a quantitative in-situ transmission electron microscope (TEM) study of stress-assisted grain growth in 75 nm thick platinum thin films. We utilized notch-induced stress concentration to observe the microstructural evolution in real time. From quantitative measurements, we find that rapid grain growth occurred above 290 MPa of far field stress and ~0.14% elongation. This value is found to be higher than that required for stable interface motion but lower than the stress required for unstable grain boundary motion. We attribute such grain growth to geometrical incompatibility arising out of crystallographic misorientation in adjoining grains, or in other words, geometrically necessary grain growth.

Type
Research Letters
Information
MRS Communications , Volume 3 , Issue 2 , June 2013 , pp. 101 - 105
Copyright
Copyright © Materials Research Society 2013 

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