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X-Ray Detectors : A Changing World

Published online by Cambridge University Press:  14 March 2018

R.A. Sareen  and
T. Nashashbi
R.A. Sareen
Affiliation:
Gresham Scientific Instruments Fieldhouse Lane, Marlow, Bucks SL7 1TB, England
T. Nashashbi
Affiliation:
Gresham Scientific Instruments Fieldhouse Lane, Marlow, Bucks SL7 1TB, England

Extract

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The first in a series of articles looking at developments in X-ray detectors and Field effect transistors. In recent years we have seen both Si(Li) and Intrinsic Silicon Detectors with resolutions below 130 eV. These same detectors are capable of measuring the soft X-rays like Be K, B K, C K etc. with good resolution and with peak positions reasonably close to the exact position for these lines. The Carbon peak is the one most affected by the L absorption edges in Silicon and in some circumstances can be shifted as much as 30 eV down in energy. Shifts can also result from the settings of amplifier threshold discriminators and ADC designs. At higher energies (e.g. Mo K) the Si(Li) detector, if not properly drifted can also have a down shift by as much as 200 eV.

Type
Research Article
Information
Microscopy Today , Volume 4 , Issue 7 , September 1996 , pp. 14 - 15
Copyright
Copyright © Microscopy Society of America 1996

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