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Combining Focused Ion Beam and Scanning Electron Microscopy for IC Fab Support and Defect Review

Published online by Cambridge University Press:  14 March 2018

Janet Tashima
Affiliation:
FEI Company
Jay Lindquist
Affiliation:
FEI Company

Extract

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The cutting-edge tool for IC fab support and defect review brings together the Focused Ion Beam (FIB) technology with the Scanning Electron Microscope (SEM) into a single workstation. The twin beam FIB/SEM workstation, FEI Company's DualBeam™ 820 for example, combines the unique micromachining, microdeposition, and analysis capabilities of a FIB with the high resolution imaging power of a Schottky field emission scanning electron microscope (FE SEM). The full functionality of both instruments is available and neither is compromised by the other.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 1996