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TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates

  • K. Engl (a1), M. Beer (a1), J. Zweck (a1), S. Miller (a2), S. Bader (a2), H. Lugauer (a2), G. Brüderl (a2), A. Lell (a2) and V. Härle (a2)...

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TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates

  • K. Engl (a1), M. Beer (a1), J. Zweck (a1), S. Miller (a2), S. Bader (a2), H. Lugauer (a2), G. Brüderl (a2), A. Lell (a2) and V. Härle (a2)...

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