Hostname: page-component-84b7d79bbc-dwq4g Total loading time: 0 Render date: 2024-07-29T00:25:27.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Local Stress Measurements in Microelectronic Devices Using HREBSD

Published online by Cambridge University Press:  22 July 2022

T.J. Ruggles
T.J. Ruggles*
Affiliation:
Sandia National Laboratories, Material, Physical, and Chemical Sciences Center, Albuquerque, NM
*
*Corresponding author: truggle@sandia.gov

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Quantitative and Qualitative Mapping of Materials
Information
Microscopy and Microanalysis , Volume 28 , Supplement S1 , August 2022 , pp. 578 - 579
Check for updates
Copyright
Copyright © Microscopy Society of America 2022

References

Ruggles, T. et al. , Ultramicroscopy 195 (2018), p. 85.10.1016/j.ultramic.2018.08.020CrossRefGoogle Scholar
This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA-0003525.Google Scholar