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TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates

Published online by Cambridge University Press:  05 September 2003

K. Engl ,
M. Beer ,
J. Zweck ,
S. Miller ,
S. Bader ,
H. Lugauer ,
G. Brüderl ,
A. Lell  and
V. Härle
K. Engl
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitatsstr. 31, D-93053 Regensburg, Germany
M. Beer
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitatsstr. 31, D-93053 Regensburg, Germany
J. Zweck
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitatsstr. 31, D-93053 Regensburg, Germany
S. Miller
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
S. Bader
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
H. Lugauer
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
G. Brüderl
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
A. Lell
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
V. Härle
Affiliation:
OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany
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Abstract

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Type
Invited Papers
Information
Microscopy and Microanalysis , Volume 9 , Issue S03 , September 2003 , pp. 70 - 71
Copyright
Copyright © Microscopy Society of America 2003

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