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Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

  • T. S. Cheng (a1), C. T. Foxon (a1), N. J Jeffs (a1), O. H. Hughes (a1), B. G. Ren (a2), Y. Xin (a3), P. D. Brown (a3), C. J. Humphreys (a3), A. V. Andranov (a4), D. E. Lacklison (a4), J. W. Orton (a4) and M. Halliwell (a5)...

Abstract

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.

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References

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[1] Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., Burns, M., J. Appl. Phys. 76, 1363-1398 (1994).
[2] Mohammad, S. N., Salvador, A. A., Morkoç, H., Proc. IEEE 83, 1306-1355 (1995).
[3] Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Appl. Phys. Lett. 64, 1687-1689 (1994).
[4] Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Mukai, T., Jpn. J. Appl. Phys . 34, L1332-L1335 (1995).
[5] Nakamura, S, Senoh, M, Nagahama, S, Iwasa, N, Yamada, T, Matsushita, T, Kiyoku, H, Sugimoto, Y, Jpn. J. Appl. Phys. 35, L74-L76 (1996).
[6] Cheng, T. S., Jenkins, L. C., Hooper, S. E., Foxon, C. T., Orton, J. W., Lacklison, D. E., Appl. Phys. Lett. 66, 1509-1511 (1995).
[7] Hooper, S. E., Foxon, C. T., Cheng, T. S., Jenkins, L. C., Lacklison, D. E., Orton, J. W., Bestwick, T., Kean, A., Dawson, M., Duggan, G., J. Cryst. Growth 155, 157 (1995).
[8] Foxon, CT, Cheng, TS, Novikov, SV, et al., J. Cryst. Growth 150, 892-896 (1995).
[9] Xin, Y., Brown, P. D., Boothroyd, C. B., Preston, A. R., Humphreys, C. J., Cheng, T. S., Foxon, C. T., Andrianov, A. V., Orton, J. W., unpublished (1996).

Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

  • T. S. Cheng (a1), C. T. Foxon (a1), N. J Jeffs (a1), O. H. Hughes (a1), B. G. Ren (a2), Y. Xin (a3), P. D. Brown (a3), C. J. Humphreys (a3), A. V. Andranov (a4), D. E. Lacklison (a4), J. W. Orton (a4) and M. Halliwell (a5)...

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