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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

  • A.E. Nikolaev (a1), Yu.V. Melnik (a1), M.N. Blashenkov (a1), N.I. Kuznetsov (a1), I.P. Nikitina (a1), A.S. Zubrilov (a1), D.V. Tsvetkov (a1), V. I. Nikolaev (a2), V.A. Dmitriev (a2) and V.A. Soloviev (a2)...

Abstract

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration Nd-Na in undoped epitaxial layers ranged from 2×1017 to 1×1019cm−3. Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.

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Keywords

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

  • A.E. Nikolaev (a1), Yu.V. Melnik (a1), M.N. Blashenkov (a1), N.I. Kuznetsov (a1), I.P. Nikitina (a1), A.S. Zubrilov (a1), D.V. Tsvetkov (a1), V. I. Nikolaev (a2), V.A. Dmitriev (a2) and V.A. Soloviev (a2)...

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