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TEM studies on the crystal structure of YBa2Cu3O7−x thin films prepared by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

H. Takahashi
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, Shinonome 1-chome, Koto-ku, Tokyo 135, Japan
K. Ohata
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, Shinonome 1-chome, Koto-ku, Tokyo 135, Japan
T. Morishita
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13, Shinonome 1-chome, Koto-ku, Tokyo 135, Japan
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Abstract

The crystal structures of YBa2Cu3O7−x thin films deposited on MgO(100) substrates have been investigated by cross-sectional transmission electron microscopy (TEM). At a substrate temperature of 670 °C, Cu–O chains become wavy. Stacking faults are formed between the Cu–O chains. Therefore, the domains with c-axis lattice constants of 15 Å, 27 Å, and 39 Å are observed. By applying a biasing voltage of + 300 V, deviation in the c-axis orientation is reduced compared to that at an unbiased condition; even some grain boundaries remain. Near substrate surfaces, deviation of the c-axis direction from the substrate normal increases with a decreasing substrate temperature from 700 °C to 670 °C. Application of a substrate bias voltage of +300 V improved the heteroepitaxial growth of the c-axis oriented YBa2Cu3O7−x.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

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References

1.Witanachchi, S., Kwok, H.S., Wang, X.W., and Shaw, D.T., Appl. Phys. Lett. 53, 234 (1988).CrossRefGoogle Scholar
2.Koren, G., Gupta, A., and Baseman, R.J., Appl. Phys. Lett. 54, 1920 (1989).CrossRefGoogle Scholar
3.Izumi, H., Ohata, K., Hase, T., Suzuki, K., Morishita, T., and Tanaka, S., J. Appl. Phys. 68, 6331 (1990).CrossRefGoogle Scholar
4.Ohata, K., Izumi, H., Hase, T., Suzuki, K., Morishita, T., and Tanaka, S., in Laser Ablation for Materials Synthesis, edited by Paine, D.C. and Bravman, J. C. (Mater. Res. Soc. Symp. Proc. 191, Pittsburgh, PA, 1990), p. 183.Google Scholar
5.Takahashi, H., Izumi, H., Ohata, K., Hase, T., Sasaki, M., Morishita, T., and Tanaka, S., Physica C 190, 427 (1992).CrossRefGoogle Scholar
6.Eibl, O. and Roas, B., J. Mater. Res. 5, 2620 (1990).CrossRefGoogle Scholar
7.Takahashi, H., Hase, T., Izumi, H., Ohata, K., Morishita, T., and Tanaka, S., Physica C 179, 291 (1991).CrossRefGoogle Scholar
8.Streiffer, S. K., Lairson, B.M., Eom, C.B., Clemens, B.M., Bravman, J.C., and Geballe, T. H., Phys. Rev. B 43, 13007 (1991).CrossRefGoogle Scholar
9.Takahashi, H., Aoki, Y., Usui, T., Fromknecht, R., Morishita, T., and Tanaka, S., Physica C 175, 381 (1991).CrossRefGoogle Scholar
10.Ramesh, R., Inam, A., Hwang, D. M., Ravi, T. S., Sands, T., Xi, X.X., Wu, X. D., Li, Q., Venkatesan, T., and Kilaas, R., J. Mater. Res. 6, 2264 (1991).CrossRefGoogle Scholar