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The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures

Published online by Cambridge University Press:  31 January 2011

Nancy E. Lumpkin ,
Gregory R. Lumpkin  and
Mark G. Blackford
Nancy E. Lumpkin
Affiliation:
Semiconductor Nanofabrication Facility, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
Gregory R. Lumpkin
Affiliation:
Materials Division, Australian Nuclear Science and Technology Organisation, Private Mail Bag 1, Menai, New South Wales 2234, Australia
Mark G. Blackford
Affiliation:
Materials Division, Australian Nuclear Science and Technology Organisation, Private Mail Bag 1, Menai, New South Wales 2234, Australia
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Abstract

Nickel is a commonly used wetting agent in alloyed Au–Ge ohmic contacts to n-GaAs, resulting in uniformity improvements to the morphology and contact resistance. In order to study the role of Ni in Ni–Ge–Au alloys, we have fabricated samples with varying Ni content and characterized them using electron microbeam techniques. Our data indicate the amount of Ni in the alloy affects the microstructure and composition, the morphology of the metal/GaAs interface, and the amount of GaAs consumed during the alloy reaction. Also, the dopant distribution into the GaAs is heterogeneous depending on the alloy microstructure.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1261 - 1271
Copyright
Copyright © Materials Research Society 1999

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