Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-02T06:48:32.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure of LaB6-base thick film resistors

Published online by Cambridge University Press:  31 January 2011

Z.G. Li ,
P.F. Carcia  and
P.C. Donohue
Z.G. Li
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
P.F. Carcia
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
P.C. Donohue
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
Get access

Abstract

The microstructure of LaB6-base thick film resistors was investigated by cross-sectional transmission electron microscopy. The specimens were prepared by a technique that polished them to a thin wedge, thus avoiding ion-milling and permitting imaging over a distance of tens of microns. The resistor microstructure contained a finely divided electrically conductive phase of TaB2 and nonconducting crystals of CaTa4O11, formed during high temperature processing of glass and LaB6 ingredients of the thick film ink. Using higher surface area ingredients virtually suppressed the formation of CaTa4O11 crystals, and the microstructure became more uniform. Resistors made with higher surface area intermediates also had better voltage withstanding properties.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2225 - 2229
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Pike, G. E. and Seager, C. H., J. Appl. Phys. 48, 5152 (1977).CrossRefGoogle Scholar
2.Kusy, A., Thin Solid Films 37, 281 (1976).CrossRefGoogle Scholar
3.Forlani, F. and Prudenziati, M., Electrocomp. Sci. Technol. 3, 77 (1976).CrossRefGoogle Scholar
4.Smith, D. P. H. and Anderson, J. C., Thin Solid Films 71, 79 (1980).CrossRefGoogle Scholar
5.Vest, R. W., Purdue Research Foundation, Final Technical Report, ARPA Order No. 1642 (1975).Google Scholar
6.Dinesh, T., “Resistor Conductor Interface in Thick Film,” Ph.D. Thesis, Purdue University (1979), (University Microfilms International, Ann Arbor, MI 48106).Google Scholar
7.Nordstrom, T. V. and Hills, C. R., J. Hybrid Microelectron. 40, 14 (1980).Google Scholar
8.Adachi, K., Iida, S., Ishigame, J., and Sekihara, S., J. Mater. Res. 6, 1729 (1991).CrossRefGoogle Scholar
9.Howitt, D. G., J. Electron Microsc. Technol. 1, 405 (1984).CrossRefGoogle Scholar
10.Klepeis, S. J., Benedict, J. P., and Anderson, R. M., in Specimen Preparation for Transmission Electron Microscopy of Materials, edited by Bravman, J. C., Anderson, R. M., and McDonald, M. L. (Mater. Res. Soc. Symp. Proc. 115, Pittsburgh, PA, 1988), p. 179.Google Scholar
11.Carcia, P. F., Champ, S. E., and Flippen, R. B., Proc. 26th Electronics Components Conference (San Francisco, CA), 156 (1976).Google Scholar