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Ion beam synthesis of nitride layers in iron

Published online by Cambridge University Press:  31 January 2011

A.M. Vredenberg ,
C.M. Pérez-Martin ,
J.S. Custer ,
D.O. Boerma ,
L. de Wit ,
F.W. Saris ,
N.M. van der Pers ,
Th.H. de Keijser  and
E.J. Mittemeijer
A.M. Vredenberg
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
C.M. Pérez-Martin
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
J.S. Custer
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
D.O. Boerma
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
L. de Wit
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F.W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
N.M. van der Pers
Affiliation:
Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
Th.H. de Keijser
Affiliation:
Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
E.J. Mittemeijer
Affiliation:
Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
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Abstract

Stoichiometric iron nitride layers have been synthesized by high dose, high energy nitrogen implantation into Fe using a two-step implantation process. First, a nitrogen preimplantation at ~100 °C is used to form nitride precipitates. A low temperature is necessary to restrict the nitrogen mobility. Second, 1 MeV implantation at ~300 °C leads to the formation of a stoichiometric γ′–Fe4N layer at the position of the preimplanted N atoms. Growth of this nitride layer proceeds by diffusion of the implanted N through either the α–Fe matrix (for 200 or 500 keV preimplantations) or the nitride layer itself (for 1 MeV preimplantation). During annealing above 350 °C the γ′ layers dissolve in a planar fashion, characterized by an activation energy of 2.3 eV. Phase formation during preimplantation and phase transformations during subsequent annealing or hot implantation can be understood from the thermodynamics for the Fe–N system, while the kinetics of layer growth is influenced by the beam-induced defects. The experiment and model suggest that γ′ is not a thermodynamically stable phase below 310 ± 10 °C and should decompose into α (ferrite) and ∊ nitride.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 10 , October 1992 , pp. 2689 - 2712
Copyright
Copyright © Materials Research Society 1992

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