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Diamond film nucleation and interface characterization

Published online by Cambridge University Press:  31 January 2011

P. Bou ,
L. Vandenbulcke ,
R. Herbin  and
F. Hillion
P. Bou
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
L. Vandenbulcke
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
R. Herbin
Affiliation:
C.N.R.S.-L.C.S.R. 45071 Orleans Cedex 2, France
F. Hillion
Affiliation:
CAMECA Courbevoie 92400, France
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Abstract

A powerful micro SIMS technique coupled to a computer driven acquisition system has allowed the simultaneous recording of C−, MoO−, and Si− images of the sample surfaces, or of the transverse cross sections of the Mo-diamond interface. Diamond deposition has been shown to take place on a Mo2C layer, and the influence on the nucleation process of Si contamination, coming from the quartz tube etched by H atoms, has been investigated. Contamination can in fact occur during the shutdown procedures or during the whole experiment. This last contamination can be avoided by using suitable pressure ranges or gas combinations. Moreover, the deposition time necessary to obtain well-crystallized diamond films and the nucleation density could be optimized by an in situ pretreatment stage. This treatment reduces the delay observed before nucleation (which would correspond to the carbide formation), and increases the carbon activity at the sample surface.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2151 - 2159
Copyright
Copyright © Materials Research Society 1992

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