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CVD Si3N4 on single crystal SiC: Part I. Characterization and orientation relationship at the interface

Published online by Cambridge University Press:  29 June 2016

O. Unal ,
J. J. Petrovic  and
T. E. Mitchell
O. Unal
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. J. Petrovic
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T. E. Mitchell
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Si3N4 deposited by CVD on the surface of single crystal SiC was studied by SEM, x-ray diffraction, and TEM techniques. Characterization of the thick Si3N4 deposit was made by SEM and x-ray diffraction. The main emphasis, however, was on the analysis of the Si3N4/SiC interface and this analysis was carried out by electron diffraction studies in TEM. Both x-ray diffraction and TEM studies revealed that the CVD Si3N4 deposit has almost entirely the α-form except for occasional large β crystals. The structure of the SiC substrate in the interior was 6H but the surface structure close to the interface was always microtwinned β. Diffraction studies of the bulk Si3N4 deposit showed not only the presence of preferred growth directions but also different growth orientations near the substrate interface. TEM investigations at the interface also revealed that preferred growth orientations at the Si3N4/SiC interface are different from those in the bulk. The prominent orientation relationship at the interface is [0001]Si3N4//[101]SiC; Si3N4//SiC; a second one, namely Si3N4//[101]SiC; Si3N4//SiC relationship was also occasionally observed. Microindentation tests at the interface indicated that the Si3N4/SiC interface bonding is strong at ambient temperatures but weakens at high temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 136 - 147
Copyright
Copyright © Materials Research Society 1992

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