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Crystallography of YBa2Cu3O6+x thin film-substrate interfaces

Published online by Cambridge University Press:  31 January 2011

Lisa A. Tietz ,
C. Barry Carter ,
Daniel K. Lathrop ,
Stephen E. Russek ,
Robert A. Buhrman  and
Joseph R. Michael
Lisa A. Tietz
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
Daniel K. Lathrop
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Stephen E. Russek
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Robert A. Buhrman
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Joseph R. Michael
Affiliation:
Homer Research Laboratory, Bethlehem Steel Corporation, Bethlehem, Pennsylvania 18016
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Abstract

The epitactic nature of the growth of YBa2Cu3O6+x (YBCO) superconducting thin films on ceramic substrates has been studied using high-resolution electron microscopy (HREM) and selected-area diffraction (SAD) of cross-sectional specimens. The films were grown in situ on (001)-oriented MgO and (001)-oriented Y2O3-stabilized cubic ZrO2 (YSZ) single-crystal substrates by electron beam evaporation. Both of these materials have large lattice misfits with respect to YBCO. Different orientation relationships were observed for films grown on the two types of substrates. These orientation relationships are shown to provide the best matching of the oxygen sublattices across the substrate-film interfaces. A crystalline intermediate layer, 6 nm thick, between the YBCO film and YSZ substrate was observed by HREM and shown by EDS to be a Ba-enriched phase, possibly barium zirconate formed by a reaction. In contrast, the YBCO–MgO interface was found to be sharp and free of any intermediate layers.

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Articles
Information
Journal of Materials Research , Volume 4 , Issue 5 , October 1989 , pp. 1072 - 1081
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1Naito, M.Hammond, R. H.Oh, B.Hahn, M. R.Hsu, J. W. P.Rosen-thai, P., Marshall, A. F.Beasley, M. R.Geballe, T. H. and Kapitulnik, A.J. Mater. Res. 2, 713 (1987).CrossRefGoogle Scholar
2Laibowitz, R. B.Koch, R.H.Chaudhari, P. and Gambino, R. J.Phys Rev. B 35, 8821 (1987).CrossRefGoogle Scholar
3Lathrop, D. K.Russek, S. E. and Buhrman, R. A.Appl. Phys Lett 51, 1554 (1987).CrossRefGoogle Scholar
4Silver, R. M.Berezin, A. B.Wendman, M. and Lozanne, A.L. deAppl. Phys. Lett. 52, 2174 (1988).CrossRefGoogle Scholar
5Berberich, P.Tate, J.Dietsche, W. and Kinder, H.Appl Phys Lett 53, 925 (1988).CrossRefGoogle Scholar
6Setsune, K.Kamada, T.Adachi, H. and Wasa, K.J Appl Phvs 64 1318 (1988).CrossRefGoogle Scholar
7Fujita, J.Yoshitake, T.Kamijo, A.Satoh, T. and Igaarashi, H.J Appl Phys. 64, 1292 (1988).CrossRefGoogle Scholar
8Hong, M.Liou, S. H.Kwo, J. and Davidson, B. A.Appl. Phys Lett 51, 694 (1987).CrossRefGoogle Scholar
9Moorjani, K.Bohandy, J.Adrian, F. J.Kim, B. F.Shull, R. D.Chiang, C. K.Swartzendruber, L. J. and Bennett, L. H.Phvs Rev B 16 4036 (1987).CrossRefGoogle Scholar
10Dijkkamp, D.Venkatesan, T.Wu, X. D.Shaheen, S. A.Jisrawi, N.Min-Lee, Y. H., McLean, W. L. and Croft, M.Appl. Phys Lett 51 619 (1987).CrossRefGoogle Scholar
11Komuro, S.Aoyagi, Y.Morikawa, T. and Namba, S.Jpn J Appl Phys. 27, L34 (1988).CrossRefGoogle Scholar
12Roas, B.Shultz, L. and Endres, G.Appl. Phys. Lett. 53, 1557 (1988)CrossRefGoogle Scholar
13Inam, A.Hegde, M. S.Wu, X. D.Venkatesan, T.England, P.Miceli, P. F., Chase, E. W.Chang, C. C.Tarascon, J. M. and Wachtman, J. B.Appl. Phys. Lett. 53, 908 (1988).CrossRefGoogle Scholar
14Meyer, O.Weschenfelder, F.Geerk, J.Li, H. C. and Xiong, G. C.Phys. Rev. B 37, 9757 (1988).CrossRefGoogle Scholar
15Nagata, F.Tsuruta, C.Kakibayashi, H.Shimotsu, T.Aida, T. and (Yamane, A.Inst. Phys. Conf. Ser. No. 93: Vol. 2, Ch. 6, 241 (1988).Google Scholar
16Enomoto, Y.Murakami, T.Suzuki, M. and Moriwaki, K.Jpn J Appl Phys. 26, L1248 (1987).CrossRefGoogle Scholar
17Tietz, L. A.Cooman, B.C. De, Carter, C. B.Lathrop, D. K.Russek, S. E. and Buhrman, R. A.J. Electron Microsc. Techn. 8 (3), 263–272 (1988).CrossRefGoogle Scholar
18Tietz, L. A.Cooman, B.C. De, Carter, C. B.Lathrop, D.K.Russek, S. E. and Buhrman, R.A.Mat. Res. Soc. Symp. Proc. 99, 719 (1988).CrossRefGoogle Scholar
19Hwang, D. M.Nazar, L.Venkatesan, T. and Wu, X. D.Appl. Phys. Lett. 52, 1834 (1988).CrossRefGoogle Scholar
20Venkatesan, T. C.Chang, C.Dijkkamp, D. S.Ogale, B. E.Chase, W.Farrow, L. A. D.Hwang, M.Miceli, P. F. S.Schwarz, A. and Tarascon, J.M., J. Appl. Phys. 63, 4591 (1988).CrossRefGoogle Scholar
21Nakajima, H.Yamaguchi, S.Iwasaki, K.Morita, H.Fujimori, H. and Fujino, Y.Appl. Phys. Lett. 53, 1437 (1988).CrossRefGoogle Scholar
22Gurvitch, M. and Fiory, A. T.Appl. Phys. Lett. 51, 1027 (1987).CrossRefGoogle Scholar
23Yan, M. F.Rhodes, W. W. and Gallagher, P. K.J. Appl. Phys. 63, 821 (1988).CrossRefGoogle Scholar
24Mogro-Campero, A., Turner, L. G.Hall, E. L. and Burrell, M. C.Appl. Phys. Lett. 52, 2068 (1988).CrossRefGoogle Scholar
25Stamper, A.Greve, D. W.Wong, D. and Schlesinger, T. E.Appl. Phys. Lett. 52, 1746 (1988).CrossRefGoogle Scholar
26Onuma, Y.Kamimura, K.Nakao, M.Kunugi, K. and Kubota, M.Jpn. J. Appl. Phys. 27, 1351 (1988).CrossRefGoogle Scholar
27Tietz, L.A.Haley, J.Carter, C.B.Lathrop, D.K.Russek, S.E. and Buhrman, R. A.presented at the Materials Research Society Spring Meeting, Reno, NV, April 5-9, 1988.Google Scholar
28Cima, M.J.Schneider, J. S.Peterson, S.C. and Coblenz, W.Appl. Phys. Lett. 53, 710 (1988).CrossRefGoogle Scholar
29Beno, M.A.Soderholm, L.Capone, D.W. II , Hicks, D.G.Jorgesen, J. D.Grace, J. D.Schuller, I. K.Segre, C. U. and Zhang, K.Appl. Phys. Lett. 51, 57 (1987).CrossRefGoogle Scholar
30Chen, C.H.Kwo, J. and Hong, M.Appl. Phys. Lett. 52, 841 (1988).CrossRefGoogle Scholar
31Tendeloo, G. Van, Zandbergen, H. W.Okabe, T. and Amelinckx, S.Solid State Commun. 63, 969 (1987).CrossRefGoogle Scholar
32Domenges, B.Hervieu, M.Michel, C. and Raveau, B.Europhys. Lett. 4, 211 (1987).CrossRefGoogle Scholar
33Tietz, L.A.Carter, C.B.Lathrop, D.K.Russek, S.E. and Buhrman, R.A.Proc. 46th Annual Meeting EMSA, 870 (1988).Google Scholar
34Tietz, L. A.Cooman, B.C. De, Carter, C.B.Lathrop, D.K.Russek, S.E. and Buhrman, R.A.Mat. Res. Soc. Symp. Proc. 99, 715 (1988).CrossRefGoogle Scholar
35Roth, R. S.Davis, K.L. and Dennis, J.R.Adv. Ceram. Mater. 2, 303 (1987).CrossRefGoogle Scholar