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Characterization of extremely thin epitaxial layers and films by new interference fringes

Published online by Cambridge University Press:  31 January 2011

Lu Taijing
Affiliation:
Laser Science Research Group, Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351-01 Japan
Koichi Toyoda
Affiliation:
Laser Science Research Group, Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351-01 Japan
Li Lian
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo, 171 Japan
Nobuhito Nango
Affiliation:
Ratoc System Engineering Co., Ltd., Shinmei Building, Nishishijuku 7-7-33, Shinjuku-ku, Tokyo, 160 Japan
Tomoya Ogawa
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo, 171 Japan
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Abstract

The existence and imperfection of several types of epitaxial layers and films on the substrate crystals were successfully detected and characterized nondestructively using a new interference fringes method. It was found that the interference fringes generated by amorphous thin films showed many very tiny bright spots that became discontinuous, which was quite different from the case of fringes generated by a crystalline epitaxially grown layer (smooth fringes). Multiple layers on a substrate were also observed by the fringes that were not concentric, but interlacing.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

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References

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