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Substrate and temperature effects in lead zirconate titanate films produced by facing targets sputtering

Published online by Cambridge University Press:  31 January 2011

R.A. Roy  and
K.F. Etzold
R.A. Roy
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
K.F. Etzold
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The growth of ferroelectric lead zirconate titanate (PZT) films by rf-sputtering using a facing targets geometry is described. This study focuses on the influence of the substrate on PZT thin film composition, structure, and electrical properties. The deposition temperatures ranged from room temperature to 700 °C and the process gas was a mixture of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film composition, microstructure, and properties were evaluated using Rutherford backscattering spectroscopy (RBS), x-ray diffraction, electron microscopy, and measurements of the permittivity and polarization. The microstructure, composition, and permittivity of the films were found to be strongly dependent on the substrate temperature and on the preparation history of the films.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 6 , June 1992 , pp. 1455 - 1464
Copyright
Copyright © Materials Research Society 1992

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