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Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method

Published online by Cambridge University Press:  03 March 2011


Haruki Ryoken
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 Japan; and Department of Applied Science for Electronics & Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Isao Sakaguchi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Naoki Ohashi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Takashi Sekiguchi
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Shunichi Hishita
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Hajime Haneda
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 Japan; and Department of Applied Science for Electronics & Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Corresponding
E-mail address:

Abstract

Zinc oxide (ZnO) films doped with aluminum (Al) were deposited with a pulsed laser deposition technique to characterize the charge compensation phenomena in ZnO. In particular, oxygen radical (O*) irradiation during film deposition was used to modify the oxygen stoichiometry. Irradiation with O* decreased electron concentration in Al-doped ZnO. The lattice parameter of the resultant films also varied with the growth conditions. However, no obvious correlation between electron concentration and lattice parameter was found. The self-diffusion coefficients indicated the presence of non-equilibrium defects. The properties of the films are discussed from the viewpoint of non-equilibrium compensated defects detected in the diffusion measurements.


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Articles
Copyright
Copyright © Materials Research Society 2005

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References

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