Skip to main content Accessibility help
×
Home

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

  • Thomas Gerrer (a1), Volker Cimalla (a1), Patrick Waltereit (a1), Stefan Müller (a1), Fouad Benkhelifa (a1), Thomas Maier (a1), Heiko Czap (a1), Oliver Ambacher (a2) and Rüdiger Quay (a1)...

Abstract

We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (Pout) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm2 AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
      Available formats
      ×

Copyright

Corresponding author

Author for correspondence: Thomas Gerrer, E-mail: thomas.gerrer@iaf.fraunhofer.de

References

Hide All
1Mishra, UK, Parikh, P and Wu, Y-F (2002) AlGaN/GaN HEMTs-an overview of device operation and applications. Proceedings of the IEEE 90(6), 10221031.
2Wu, Y-f., et al. 40-W/mm Double Field-plated GaN HEMTs. In 2006 Device Research Conference, Piscataway, NJ, 151152, 2006. IEEE.
3Palankovski, V and Quay, R (2004) Analysis and Simulation of Heterostructure Devices. Computational microelectronics. Wien: Springer.
4Touloukian, YS eds (1978) Thermophysical properties of matter The TPRC data series; a comprehensive compilation of data by the Thermophysical Properties Research Center (TPRC), Purdue Univ, volume 1 of Thermophysical properties of matter. IFI, New York, 3. print edition.
5Webster, RF, et al. (2015) Electron microscopy of gallium nitride growth on polycrystalline diamond. Semiconductor Science and Technology 30(11), 114007.
6van Dreumel, GWG, et al. (2010) Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates. Diamond and Related Materials 19(5–6), 437440.
7Hirama, K, Kasu, M and Taniyasu, Y (2012) RF high-power operation of AlGaN/GaN HEMTs epitaxially grown on diamond. IEEE Electron Device Letters 33(4), 513515.
8Dussaigne, A, et al. (2010) High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate. Japanese Journal of Applied Physics 49(6), 61001.
9Hageman, PR, Schermer, JJ and Larsen, PK (2003) GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition. Thin Solid Films 443(1–2), 913.
10Anderson, TJ, et al. (2014) (Invited) nanocrystalline diamond for near junction heat spreading in GaN power HEMTs. ECS Transactions 61(4), 4549.
11Ejeckam, F, et al. S2-T1 GaN-on-diamond: A brief history. In 2014 Lester Eastman Conference on High Performance Devices (LEC), 2014, 15.
12Blevins, JD and Via, GD Prospects for Gallium Nitride-on-Diamond Transistors. In CSICS 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, 2016, 14.
13Blevins, JD, et al. Developing a new thermal paradigm for Gallium Nitride (GaN) device technology. In CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology, 2016.
14Ejeckam, F, et al. Diamond for enhanced GaN device performance. In IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2014, Piscataway, NJ, 2014, 12061209, IEEE.
15Ejeckam, F, et al. 3, 000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350 channel temperature. In 2014 30th Semiconductor Thermal Measurement & Management Symposium (SEMI-THERM), 2014, 242246.
16Dumka, DC, et al. Electrical and Thermal Performance of AlGaN/GaN HEMTs on Diamond Substrate for RF Applications. In CSICS 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, 2013, 14.
17Dumka, DC and Saunier, P AlGaN/GaN HEMTs on diamond substrate. In 65th Annual Device Research Conference, 2007, Piscataway, NJ, 2007, 3132, IEEE.
18Chu, KK, et al. Thermal modeling of high power GaN-on-Diamond HEMTs fabricated by low-temperature device transfer process. In CSICS 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, vol. 2013, 2013, 14.
19Chao, PC, et al. (2016) GaN-on-Diamond HEMTs with 11W/mm Output Power at 10 GHz. MRS Advances 1(2), 147155.
20Cho, J, et al. (2017) Phonon conduction in GaN-diamond composite substrates. Journal of Applied Physics 121(5), 055105.
21Liu, D, et al. (2017) Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices. Scripta Materialia 128, 5760.
22Won, Y, et al. (2015) Fundamental cooling limits for high power density Gallium Nitride electronics. IEEE Transactions on Components, Packaging and Manufacturing Technology 5(6), 737744.
23Yablonovitch, E, et al. (1990) Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates. Applied Physics Letters 56(24), 24192421.
24Arbet-Engels, V, et al. (1995) Flexible, thin-film, GaAs hetero-junction bipolar transistors mounted on natural diamond substrates. Solid-State Electronics 38(11), 19721974.
25Gerrer, T, et al. Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding. In 2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017, 2528.
26Yoshikawa, T, et al. (2015) Appropriate salt concentration of nanodiamond colloids for electrostatic self-assembly seeding of monosized individual diamond nanoparticles on silicon dioxide surfaces. Langmuir the ACS Journal of Surfaces and Colloids 31(19), 53195325.
27El-Dasher, BS, et al. (2006) Crystallographic anisotropy of wear on a polycrystalline diamond surface. Applied Physics Letters 88(24), 241915.
28Waltereit, P, et al. (2013) GaN HEMTs and MMICs for space applications. Semiconductor Science and Technology 28(7), 74010.
29Williams, KR and Muller, RS (1996) Etch rates for micromachining processing. Journal of Microelectromechanical Systems 5(4), 256269.
30Schwartz, B and Robbins, H (1961) Chemical Etching of Silicon I. Journal of The Electrochemical Society 108(4), 365.
31Bauhuber, M, Mikrievskij, A and Lechner, A (2013) Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions. Materials Science in Semiconductor Processing 16(6), 14281433.
32Weiss, B, et al. Analysis and modeling of GaN-based multi field plate Schottky power diodes. In 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 2016, 16, IEEE.
33Kuzmík, J, et al. (2002) Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Transactions on Electron Devices 49(8), 14961498.
34Daumiller, I, et al. (1999) Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs. IEEE Electron Device Letters 20(9), 448450.
35Schwierz, F (2005) An electron mobility model for wurtzite GaN. Solid-State Electronics 49(6), 889895.
36Maeda, N, et al. (2001) High-temperature electron transport properties in AlGaN/GaN heterostructures. Applied Physics Letters 79(11), 16341636.
37Cuerdo, R, et al. (2008) High temperature assessment of nitride-based devices. Journal of Materials Science Materials in Electronics 19(2), 189193.
38Radhakrishnan, K, et al. (2010) Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters 97(23), 232107.
39Meng, F, et al. (2012) Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility. Journal of Applied Physics 112(2), 023707.
40Bagnall, KR (June/2013) Device-level Thermal Analysis of GaN-based Electronics. Master's thesis, Massachusetts Institute of Technology.
41Lee, IH, et al. (2015) Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates. Journal of the Korean Physical Society 66(1), 6164.
42Beechem, T, et al. (2008) Micro-Raman thermometry in the presence of complex stresses in GaN devices. Journal of Applied Physics 103(12), 124501.
43Kuball, M and Pomeroy, JW (2016) A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution. IEEE Transactions on Device and Materials Reliability 16(4), 667684.
44Cho, J, et al. (2013) Improved thermal interfaces of GaN–diamond composite substrates for HEMT applications. IEEE Transactions on Components, Packaging and Manufacturing Technology 3(1), 7985.
45Koh, YK, et al. (2009) Heat-transport mechanisms in superlattices. Advanced Functional Materials 19(4), 610615.
46Martin-Horcajo, S, et al. (2016) Transient thermoreflectance for gate temperature assessment in pulse operated GaN-Based HEMTs. Electron Device Letters, IEEE 37(9), 11971200.
47Kuzmík, J, et al. (2005) Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon. IEEE Transactions on Electron Devices 52(8), 16981705.
48Cho, J, et al. (2014) Phonon scattering in strained transition layers for GaN heteroepitaxy. Physical Review B 89(11), 115301.

Keywords

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

  • Thomas Gerrer (a1), Volker Cimalla (a1), Patrick Waltereit (a1), Stefan Müller (a1), Fouad Benkhelifa (a1), Thomas Maier (a1), Heiko Czap (a1), Oliver Ambacher (a2) and Rüdiger Quay (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed