Skip to main content Accessibility help
×
Home

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

  • Peng Luo (a1) (a2), Frank Schnieder (a2), Olof Bengtsson (a2), Valeria Vadalà (a3), Antonio Raffo (a3), Wolfgang Heinrich (a2) and Matthias Rudolph (a1) (a2)...

Abstract

Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet accurate drain-lag model based on an industry standard large-signal model, i.e., the Chalmers (Angelov) model, extracted by means of pulsed S-parameter measurements, is presented. Instead of a complex nonlinear drain-lag description, only four constant parameters of the proposed drain-lag model need to be determined to accurately describe the large impacts of the drain-lag effects, e.g., drain-source current slump, typical kink observed in pulsed IV curves, and degradation of the output power. The extraction procedure of the parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. It is also shown that the model can very accurately predict the load pull performance over a wide range of drain bias voltages. Finally, the large-signal network analyzer measurements at low frequency are used to further verify the proposed drain-lag model in the prediction of the output current in time domain under large-signal condition.

Copyright

Corresponding author

Author for correspondence: Peng Luo, E-mail: Peng.Luo@b-tu.de

References

Hide All
1Rudolph, M, Fager, C and Root, DE (2011) Nonlinear Transistor Model Parameter Extraction Techniques. Cambridge, UK: Cambridge University Press.10.1017/CBO9781139014960
2Binari, SC, Klein, PB and Kazior, TE (2002) Trapping effects in GaN and SiC microwave FETs. Proceedings of the IEEE 90, 10481058.
3Luo, P, Bengtsson, O and Rudolph, M (2017) A Drain-Lag Model for GaN HEMT based on Chalmers model and pulsed S-Parameter measurements, in IEEE MTT-S IMS Dig., Honolulu, USA.
4Jarndal, A and Kompa, G (2007) Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping- and self-heating-induced dispersion and intermodulation distortion. IEEE Transactions on Electron Devices 54, 28302836.
5Yuk, KS, Branner, GR and McQuate, DJ (2009) A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trapping effects. IEEE Transactions on Microwave Theory and Techniques 57, 33223332.
6Raffo, A, Vadalà, V, Schreurs, P, Crupi, G, Avolio, G, Caddemi, A and Vannini, G (2010) Nonlinear dispersive modeling of electron devices oriented to GaN power amplifier design. IEEE Transactions on Microwave Theory and Techniques 58, 710718.
7King, JB and Brazil, T (2013) Nonlinear electrothermal GaN HEMT model applied to high-efficiency power amplifier design. IEEE Transactions on Microwave Theory and Techniques 61, 444454.10.1109/TMTT.2012.2229712
8Jardel, O, Groote, F, Reveyrand, T, Jacquet, J, Charbonniaud, C, Teyssier, JP, Floriot, D and Quéré, R (2007) An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Transactions on Microwave Theory and Techniques 55, 26602669.
9Chevtchenko, SA, Kurpas, P, Chaturvedi, N, Lossy, R and Wurfl, J (2011) Investigation and reduction of leakage current associated with gate encapsulation by SiNx in AlGaN/GaN HFETs, in CS MANTECH Conf. Dig., California, USA.
10Angelov, I, Bengtsson, L and Garcia, M (1996) Extension of the Chalmers nonlinear HEMT and MESFET model. IEEE Transactions on Microwave Theory and Techniques 44, 16641674.10.1109/22.538957
11Angelov, I, Desmaris, V, Dynefors, K, Nilsson, PA, Rorsman, N and Zirath, H (2005) On the large-signal modeling of AlGaN/GaN HEMTs and SiC MESFETs, in Proceeding of the 13th GaAs Symposium, Paris, France.
12Dambrine, G, Cappy, A, Heliodore, F and Playez, E (1988) A new method for determining the fet small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Techniques 36, 11511159.10.1109/22.3650
13Luo, P, Bengtsson, O and Rudolph, M (2016) Reliable GaN HEMT modeling based on Chalmers model and pulsed S-Parameter measurements in German Microwave Conference (GeMiC), Bochum, Germany.
14Jenkins, KA and Rim, K (2002) Measurement of the effect of self-heating in strained-silicon MOSFETs. IEEE Electron Device Letters 23, 360362.10.1109/LED.2002.1004235
15Camacho-Peñalosa, C and Aitchison, CS (1985) Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies. Electronics Letters 21, 528529.
16Luo, P, Bengtsson, O and Rudolph, M (2016) A novel approach to trapping effect based on Chalmers model and pulsed S-Parameter measurements, in European Microwave Integrated Circuits Conference (EuMIC), London, UK.
17Nunes, LC, Gomes, JL, Cabral, PM and Pedro, JC (2018) A simple method to extract trapping time constants of GaN HEMTs, in IEEE MTT-S IMS Dig., Philadelphia, USA.
18Huang, A-D, Zhong, Z, Wu, W and Guo, Y-X (2016) An artificial neural network-based electrothermal model for GaN HEMTs with dynamic trapping effects consideration. IEEE Transactions on Microwave Theory and Techniques 64, 25192528.
19Jarndal, A, Markos, AZ and Kompa, G (2011) Improved modeling of GaN HEMTs on Si substrate for design of RF power amplifiers. IEEE Transactions on Microwave Theory and Techniques 59, 644651.
20Advanced Design System (ADS) (2015) Keysight Technologies, Inc., Santa Rosa, CA, United States.
21Rudolph, M, Doerner, R, Ngnintedem, E and Heinrich, W (2012) Noise modeling of GaN HEMT devices, in European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, The Netherlands.
22Crupi, G, Raffo, A, Caddemi, A and Vannini, G (2015) Kink effect in S22 for GaN and GaAs HEMTs. IEEE Microwave and Wireless Components Letters 25, 301303.
23Raffo, A, Di Falco, S, Vadalà, V and Vannini, G (2010) Characterization of GaN HEMT low-frequency dispersion through a multiharmonic measurement system. IEEE Transactions on Microwave Theory and Techniques 58, 24902496.

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed