Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-20T03:12:44.780Z Has data issue: false hasContentIssue false

Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies

Published online by Cambridge University Press:  09 January 2015

Sara Lotfi
Affiliation:
The Ångström Laboratory, Solid State Electronics, Uppsala University, P.O. Box 534, SE-75121Uppsala, Sweden. Phone: +46-18-471-3035
Olof Bengtsson
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, D-12489Berlin, Germany
Jörgen Olsson*
Affiliation:
The Ångström Laboratory, Solid State Electronics, Uppsala University, P.O. Box 534, SE-75121Uppsala, Sweden. Phone: +46-18-471-3035
*
Corresponding author: J. Olsson Email: jorgen.olsson@angstrom.uu.se

Abstract

Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without extra masks or process steps. Radio frequency (RF) performance for Wireless local area network (WLAN) frequencies and in X-band at 8 GHz is investigated by load-pull measurements in class AB operation for both 3.3 and 5 V supply voltage. Results at 2.45 GHz showed 290 mW/mm output power density with 17 dB linear gain and over 45% power added efficiency (PAE) at 4 dB compression at a supply voltage of 5 V. Furthermore, results in X-band at 8 GHz show 8 dB linear gain, 320 mW/mm output power density and over 22% PAE at 4 dB compression. Third-order intermodulation measurements at 8 GHz revealed OIP3 of 18.9 and 21.9 dBm at 3.3 and 5 V, respectively. The transistors were also tested for reliability which showed no drift in quiescent current after 26 h of DC stress while high-power RF stress showed only small extrapolated drift at 10 years in output power density. This is to the authors' knowledge the first time high output power density in X-band is demonstrated for integrated LDMOS transistors manufactured in a 65 nm CMOS process without extra process steps.

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Abidi, A.A.: RF CMOS comes of age. IEEE J. Solid-State Circuits, 39 (2004), 549561.Google Scholar
[2]Bianchi, R.A.; Monsieur, F.; Blanchet, F.; Raynaud, C.; Noblanc, O.: High voltage devices integration into advanced CMOS technologies. IEEE Int. Electron Devices Meeting, 2008, 14.Google Scholar
[3]Mohapatra, N.R. et al. : A complementary RF-LDMOS architecture compatible with 0.13 µm CMOS technology. IEEE Int. Symp. on Power Semiconductor Devices and IC's, 2006, 14.Google Scholar
[4]Gruner, D.; Sorge, R.; Bengtsson, O.; Al Tanany, A.; Boeck, G.: Analysis, design, and evaluation of LDMOS FETs for RF power applications up to 6 GHz. IEEE Trans. Microw. Theory Tech., 58 (2010), 40224030.Google Scholar
[5]Tao, Y.; Huailin, L.; Yong Zhong, X.; Rong, Z.; Jinglin, S.; Ru, H.: Cost-effective integrated RF power transistor in 0.18-μm CMOS technology. IEEE Electron Device Lett., 27 (2006), 856858.Google Scholar
[6]Calvillo-Cortes, D.A. et al. : A 65 nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6 GHz. IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers (ISSCC), 2011, 5860.CrossRefGoogle Scholar
[7]Johansson, T. et al. : A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology. European Microwave Integrated Circuits Conf., Nuremberg, 2013, 5356.Google Scholar
[8]Sorge, R. et al. : Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, 9093.Google Scholar
[9]Muller, D. et al. : High-performance 15-V novel LDMOS transistor architecture in a 0.25-μm BiCMOS process for RF-power applications. IEEE Trans. Electron. Devices, 54 (2007), 861868.CrossRefGoogle Scholar
[10]Lotfi, S.; Olsson, J.: Investigating reliability and stress mechanisms of DC stressed CMOS 65 nm RF-LDMOS by full gate current characterization. IEEE Trans. Device Mater. Reliab., under review (2014).Google Scholar
[11]Olsson, J.: Self-heating effects in SOI bipolar transistors. Microelectron. Eng., 56 (2001), 339352.Google Scholar