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Next generation integrated SiGe mm-wave circuits for automotive radar sensors

  • Nils Pohl (a1), Herbert Knapp (a2), Christian Bredendiek (a1) and Rudolf Lachner (a2)

Abstract

In this paper, radar transmitter circuits for next generation automotive radar sensors are presented. A 79 GHz radar transmitter with an output power of 14.5 dBm consuming only 165 mA (including frequency dividers) from a 3.3 V supply voltage clearly shows the advantage of using an improved SiGe technology with an fmax of 380 GHz. In addition, two radar transmitters for higher frequencies (around 150 GHz) based on frequency doubler circuits are showing the potential of SiGe technologies. The first transmitter achieves an output power of 3 dBm (single ended) at 144 GHz, whereas the second transmitters delivers a differential output power of 0 dBm at 150 GHz. Both transmitters achieve an ultra-wide tuning range of about 45 GHz.

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Corresponding author

Corresponding author: N. Pohl Email: nils.pohl@rub.de

References

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[1]Li, H.; Rein, H.-M.; Suttorp, T.; Böck, J.: Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz. IEEE J. Solid-State Circuits, 39 (10) (2004) 16501658.
[2]Pfeiffer, U.R.; Reynolds, S.K.; Floyd, B.A.: A 77 GHz SiGe power amplifier for potential applications in automotive radar systems, in Proc. Digest of Papers Radio Frequency Integrated Circuits (RFIC) Symp. 2004 IEEE, (2004), 9194.
[3]Forstner, H.P. et al. : A 77GHz 4-channel automotive radar transceiver in SiGe, in Proc. IEEE Radio Frequency Integrated Circuits Symp. RFIC, 2008, 233236.
[4]Nicolson, S.T. et al. : A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset. IEEE Trans. Microwave Theory Tech., 56 (5) (2008) 10921104.
[5]Trotta, S. et al. : An RCP packaged transceiver chipset for automotive LRR and SRR systems in SiGe BiCMOS technology. IEEE Trans. Microwave Theory Tech., 60 (3) (2012) 778794.
[6]Chevalier, P. et al. : Towards THz SiGe HBTs, in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, 5765.
[7]Knapp, H. et al. : SiGe circuits for automotive radar, in Proc. Topical Meeting Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2007, 231236.
[8]Böck, J. et al. : SiGe bipolar technology for automotive radar applications, in Proc. Meeting Bipolar/BiCMOS Circuits and Technology, 2004, 8487.
[9]Hung, J.-J.; Hancock, T.M.; Rebeiz, G.M.: High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers. IEEE Trans. Microwave Theory Tech., 53 (2) (2005) 754761.
[10]Pohl, N.; Rein, H.-M.; Musch, T.; Aufinger, K.; Hausner, J.: SiGe bipolar VCO with ultra-wide tuning range at 80 GHz center frequency. IEEE J. Solid-State Circuits, 44 (10) (2009) 26552662.
[11]Pohl, N.; Klein, T.; Aufinger, K.; Rein, H.-M.: A low-power 80 GHz FMCW radar transmitter with integrated 23 GHz downconverter VCO, in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011, 215218.
[12]Pohl, N.; Jaeschke, T.; Aufinger, K.: An ultra-wideband 80 GHz FMCW radar system using a SiGe bipolar transceiver chip stabilized by a fractional-N PLL synthesizer. IEEE Trans. Microwave Theory Tech., 60 (3) (2012) 757765.
[13]Bredendiek, C.; Pohl, N.; Aufinger, K.; Bilgic, A.: An ultra-wideband D-band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology, in Proc. IEEE Radio Frequency Integrated Circuits Symp. RFIC, 2012, pp. 8386.
[14]Öjefors, E.; Heinemann, B.; Pfeiffer, U.R.: Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technology. IEEE Trans. Microwave Theory Tech., 59 (5) (2011) 13111318.
[15]Forstner, H.P.; Starzer, F.; Haider, G.; Wagner, C.; Jahn, M.: Frequency quadruplers for a 77GHz subharmonically pumped automotive radar transceiver in SiGe, in Proc. European Microwave Integrated Circuits Conf. EuMIC 2009, (2009), 188191.
[16]Bredendiek, C.; Pohl, N.; Aufinger, K.; Bilgic, A.: Differential signal source chips at 150 GHz and 220 GHz in SiGe bipolar technologies based on Gilbert-Cell frequency doublers, in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, pp. 8891.
[17]Jahn, M.; Aufinger, K.; Meister, T.F.; Stelzer, A.: 125 to 181 GHz fundamental-wave VCO chips in SiGe technology, in Proc. IEEE Radio Frequency Integrated Circuits Symp. (RFIC), 2012, 8790.
[18]Pfeiffer, U.R.; Ojefors, E.; Zhao, Y.: A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz, in Proc. IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers (ISSCC), 2010, pp. 416417.
[19]Wanner, R.; Lachner, R.; Olbrich, G.R.: A monolithically integrated 190-GHz SiGe push-push oscillator. IEEE Microwave Wireless Compon. Lett., 15 (12) (2005) 862864.

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