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High-power monolithic AlGaN/GaN high electron mobility transistor switches

  • Vincenzo Alleva (a1), Andrea Bettidi (a2), Walter Ciccognani (a3), Marco De Dominicis (a1), Mauro Ferrari (a3), Claudio Lanzieri (a2), Ernesto Limiti (a3) and Marco Peroni (a2)...

Abstract

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

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Corresponding author

Corresponding author: M. De Dominicis E-mail: marco_de_dominicis@hotmail.com

References

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Keywords

High-power monolithic AlGaN/GaN high electron mobility transistor switches

  • Vincenzo Alleva (a1), Andrea Bettidi (a2), Walter Ciccognani (a3), Marco De Dominicis (a1), Mauro Ferrari (a3), Claudio Lanzieri (a2), Ernesto Limiti (a3) and Marco Peroni (a2)...

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