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Flexible and miniaturized power divider

Published online by Cambridge University Press:  23 March 2015

François Burdin
Affiliation:
IMEP-LAHC, Grenoble-Alpes University, CNRS, CS 50257, 38016 Grenoble cedex, France
Florence Podevin*
Affiliation:
IMEP-LAHC, Grenoble-Alpes University, CNRS, CS 50257, 38016 Grenoble cedex, France
Philippe Ferrari
Affiliation:
IMEP-LAHC, Grenoble-Alpes University, CNRS, CS 50257, 38016 Grenoble cedex, France
*
Corresponding author: F. Podevin, Email: florence.podevin@grenoble-inp.fr

Abstract

A new flexible and miniaturized power divider (PD), based on the Wilkinson PD topology, is carried out in this paper. Flexibility and size reduction are achieved simultaneously thanks to both an open-stub loading the input port and additional transmission lines (TLines) connecting the output ports to the isolation resistance. Design equations and rules are given. As a proof-of-concept, two PDs working at 2.45 GHz were fabricated and measured. Then, on the basis of the previous developments, a 1:4 power-dividing feeding network was realized. It highlights the high performance and flexibility of the proposed PD. Agreement between simulation and measurement results is very good, for PDs as well as for the feeding network, thus validating the proposed approach. This concept is straightforward to be applied at higher frequencies, in particular in the millimeter-wave range on CMOS technologies, where flexibility in the choice of the TLines characteristic impedances and size reduction are mandatory.

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

[1]Wilkinson, E.J.: An N-way hybrid power divider. IEEE Trans. Microw. Theory Tech., 8 (1) (1960), 116118.Google Scholar
[2]Pozar, D.M.: Microwave Engineering, 3rd ed., Wiley, New York, 2005.Google Scholar
[3]Horst, S.; Bairavasubramanian, R.; Tentzeris, M.M.; Papapolymerou, J.: Modified Wilkinson power dividers for millimeter-wave integrated circuits. IEEE Trans. Microw. Theory Tech., 55 (11) (2007), 24392446.CrossRefGoogle Scholar
[4]Okamura, S., Wang, X.; Takahashi, K.; Tahara, M.; Sakagami, I.: A general model of modified wilkinson power dividers with additional transmission lines, in IEEE European Microwave. Conf. (EuMC), Manchester, UK, 2011.Google Scholar
[5]Ahn, H.-R.: Modified Asymmetric Impedance Transformers (MCCTs and MCVTs) and their application to impedance-transforming three-port 3-dB power dividers. IEEE Trans. Microw. Theory Tech., 59 (12) (2011), 33123321.CrossRefGoogle Scholar
[6]Franc, A.-L.; Pistono, E.; Corrao, N.; Gloria, D.; Ferrari, P.: Compact high-Q, low-loss mmW transmission lines and power splitters in RF CMOS technology, in IEEE MTT-S Int. Microwave Theory and Techniques Symp., Baltimore, Maryland, USA, 2011.CrossRefGoogle Scholar
[7]Scardelletti, M.C.; Ponchak, G.E. and Weller, T.M.: “Miniaturized Wilkinson power divider utilizing capacitive loading. IEEE Microw. Wireless Compon. Lett., 12 (1) (2002), 68.CrossRefGoogle Scholar
[8]Wu, J.; Li, E.; Guo, G.: Microstrip power divider with capacitive stubs loading for miniaturisation and harmonic suppression, in IEEE Int. Conf. on Microwave Techniques & Computational Electromagnetics, Beijing, China, 2011.CrossRefGoogle Scholar
[9]Tseng, C.-H. and Wu, C.-H.: Compact planar Wilkinson power divider using π-equivalent shunt-stub-based artificial transmission lines. Electron. Lett., 46 (19) (2010), 13271328.CrossRefGoogle Scholar
[10]Fano, R.M.: Theoretical limitations on the broadband matching of arbitrary impedances. J. Franklin Inst., 249 (1950), 5783, 139–155.CrossRefGoogle Scholar
[11]Zhao, Y.; Long, J.R. and Spirito, M.: Compact mm-wave power combiners in 65 nm CMOS-SOI, in IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Phoenix, Arizona, USA, 2011.Google Scholar