Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T00:57:53.127Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Published online by Cambridge University Press:  21 April 2011

Olivier Jardel ,
Guillaume Callet ,
Jérémy Dufraisse ,
Michele Piazza ,
Nicolas Sarazin ,
Eric Chartier ,
Mourad Oualli ,
Raphaël Aubry ,
Tibault Reveyrand  and
Jean-Claude Jacquet
...Show all authors
Olivier Jardel*
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Guillaume Callet
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jérémy Dufraisse
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Michele Piazza
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64 XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Nicolas Sarazin
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Eric Chartier
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Mourad Oualli
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Raphaël Aubry
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Tibault Reveyrand
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jean-Claude Jacquet
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Marie-Antoinette Di Forte Poisson
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Erwan Morvan
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Stéphane Piotrowicz
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
Sylvain L. Delage
Affiliation:
Alcatel-Thales III-V Lab, route de Nozay, 91460 Marcoussis Cedex, France. Phone: + 33 1 30 77 68 64
*
Corresponding author: O. Jardel Email: olivier.jardel@3-5lab.fr
Get access Rights & Permissions [Opens in a new window]

Abstract

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

Keywords

AlGaN/GaN HEMTAlInN/GaN HEMTPower devicesPower characterizations
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 3: Special Issue on European Microwave Week 2010 , June 2011 , pp. 301 - 309
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Kuzmik, J.: Power electronics on InAlN/(In)GaN: prospect for a record performance. IEEE Electron Device Lett., 22 (11) (2001), 510–512.CrossRefGoogle Scholar
[2]Jessen, G.H. et al. : RF power measurements on InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz. IEEE Electron Device Lett., 28 (5) (2007), 354–356.CrossRefGoogle Scholar
[3]Sarazin, N. et al. : AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz. IEEE Electron Device Lett., 31 (1) (2010), 11–13.CrossRefGoogle Scholar
[4]Crespo, A. et al. : High power Ka-band performance of AlInN/GaN HEMT with 9.8-nm thin barrier. IEEE Electron Device Lett., 31 (1) (2010), 2–4.CrossRefGoogle Scholar
[5]Sarazin, N. et al. : X-band power characterization of AlInN/AlN/GaN HEMT grown on SiC substrate. Electron. Lett., 43 (23) (2007).CrossRefGoogle Scholar
[6]Kuzmik, J.: InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal. Semicond. Sci. Technol., 17 ( 2002), 540–544.CrossRefGoogle Scholar
[7]Gonschorek, M.; Carlin, J.F.; Feltin, E.; Py, M.A.; Grandjean, M.: High electron mobility lattice-matched AlInN/GaN field effect transistor heterostructures. Appl. Phys. Lett., 89 (6) (2006), 062106-062106-3.CrossRefGoogle Scholar
[8]Dadgar, A. et al. : High current AlInN/GaN field effect transistors. Phys. Stat. Sol. (A), 202 (5) (2005), 832–836.CrossRefGoogle Scholar
[9]Neuburger, N. et al. : Unstrained InAlN/GaN HEMT structure. Int. J. High Speed Electron Syst., 14 (3) (2004), 785–790.CrossRefGoogle Scholar
[10]Xie, J.; Nie, X.; Wu, M.; Leach, J.H.; Özgûr, Ü.; Morkoç, H.: High electron mobility in nearly lattice matched AlInN/AlN/GaN heterostructure field effect transistor. Appl. Phys. Lett., 91 (13) (2007), 132 116–132116–3.CrossRefGoogle Scholar
[11]Medjdoub, F. et al. : Barrier-layer scaling of InAlN/GaN HEMTs. IEEE Electron Device Lett., 29 (5) (2008), 422–425.CrossRefGoogle Scholar
[12]Bahl, S.R.; Del Alamo, J.A.: A new drain-current injection technique for the measurement of off-state breakdown voltage in FET's. IEEE Trans. Electron Devices, 40 (8) (1993), 1558–1560.CrossRefGoogle Scholar
[13]Jardel, O. et al. : Performances of AlInN/GaN HEMTs for power applications at microwave frequencies in EuMW 2010, Paris, 2010.Google Scholar
[14]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12, part 2), (2007), 2660–2669.CrossRefGoogle Scholar
[15]Sun, H. et al. : 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz. IEEE Electron Device Lett., 30 (8) (2009), 796–798.CrossRefGoogle Scholar
[16]Gillespie, J.K.; Jessen, G.H.; Via, G.D.; Crespo, A.; Langley, D.: Realization of InAlN/GaN unstrained HEMTs on SiC substrates with a 75 Å barrier layer in CS MANTECH Conf., May 2007, Austin.Google Scholar