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Design of a wideband highly efficient GaN HEMT power amplifier for multiband applications

Published online by Cambridge University Press:  07 July 2023

Xuefei Xuan Open the ORCID record for Xuefei Xuan [Opens in a new window] ,
Zhiqun Cheng Open the ORCID record for Zhiqun Cheng [Opens in a new window] ,
Zhiwei Zhang Open the ORCID record for Zhiwei Zhang [Opens in a new window] ,
Tingwei Gong  and
Chao Le
Xuefei Xuan
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China The School of Electronic Engineering, Huainan Normal University, Huainan, China
Zhiqun Cheng*
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Zhiwei Zhang
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Tingwei Gong
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Chao Le
Affiliation:
The School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
*
Corresponding author: Zhiqun Cheng; Email: zhiqun@hdu.edu.cn; Zhiwei Zhang; Email: 2361051379@qq.com
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Abstract

A distributed basic matching network (MN) designed method that can achieve multioctave bandwidth and highly efficient power amplifier (PA) for multiband applications is presented in this letter. The distributed network unit with a left-rotating T-type structure is employed to construct the wideband MN, whose topology and circuit parameters are acquired through optimization. Finally, the impedance realized by the designed MN falls into the target impedance region obtained by using multi-harmonic bilateral pull technique in the desired frequency band. For the proof of the method, a broadband highly efficient PA has been designed, fabricated, and measured using commercialized GaN high electron mobility transistors (HEMT). The measured results show that the implemented PA achieves a bandwidth of 137.8% from 0.7 to 3.8 GHz. The drain efficiency is between 59% and 70% with an output power of greater than 39 dBm and a gain ranging from 9 to 12.1 dB.

Keywords

distributed matching networkGaN HEMT power amplifiershighly efficientleft-rotating T-type structurewideband
Type
Power Amplifiers
Information
International Journal of Microwave and Wireless Technologies , Volume 15 , Issue 9 , November 2023 , pp. 1468 - 1474
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Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association

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