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Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

  • Eduardo Oreja Gigorro (a1), Emilio Delgado Pascual (a1), Juan José Sánchez Martínez (a1), María Luz Gil Heras (a1), Virginia Bueno Fernández (a1), Antonio Bódalo Márquez (a1) and Jesús Grajal (a2)...

Abstract

A 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.

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Corresponding author

Author for correspondence: Eduardo Oreja Gigorro, E-mail: eoreja@indra.es

References

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Keywords

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

  • Eduardo Oreja Gigorro (a1), Emilio Delgado Pascual (a1), Juan José Sánchez Martínez (a1), María Luz Gil Heras (a1), Virginia Bueno Fernández (a1), Antonio Bódalo Márquez (a1) and Jesús Grajal (a2)...

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