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Analytic description, measurements, and modeling of 3D-embedded silicon inductance for High-Performance Hybrid Systems Applications

Published online by Cambridge University Press:  21 March 2013

Philippe Descamps ,
Olivier Tesson ,
Magali Duplessis ,
Daniel Pasquet  and
Hugues Murray
Philippe Descamps*
Affiliation:
LaMIPS, Laboratoire Commun CRISMAT-NXP Semiconductors-PRESTO Engineering, UMR 6508 CNRS, 6 Boulevard Maréchal Juin, Caen, France.
Olivier Tesson
Affiliation:
NXP Semiconductors, 2 Esplanade Anton Philips, Campus Efficiences, Colombelles BP 20000, 14096 Caen, Cedex 9, France
Magali Duplessis
Affiliation:
NXP Semiconductors, 2 Esplanade Anton Philips, Campus Efficiences, Colombelles BP 20000, 14096 Caen, Cedex 9, France
Daniel Pasquet
Affiliation:
LaMIPS, Laboratoire Commun CRISMAT-NXP Semiconductors-PRESTO Engineering, UMR 6508 CNRS, 6 Boulevard Maréchal Juin, Caen, France.
Hugues Murray
Affiliation:
LaMIPS, Laboratoire Commun CRISMAT-NXP Semiconductors-PRESTO Engineering, UMR 6508 CNRS, 6 Boulevard Maréchal Juin, Caen, France.
*
Corresponding author: P. Descamps Email: philipe.descamps@nxp.com
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Abstract

In this paper, the design and the measurements of three-dimensional through silicon vias (TSVs) based-integrated solenoids embedded within high-resistive silicon is presented. Prior to silicon implementation, a rigorous theoretical analysis is proposed to put in obviousness the advantages of using such coil architecture for L and S band applications. This analysis, demonstrates a clear reduction of the footprint passive function lying on the external substrate together with a reduced capacitive coupling with the local environment. Two-port radio frequency measurements have been performed in a wide-frequency range (100 MHz – 50 GHz) in order to support the theoretical investigations. Solenoids exhibit high-quality factors below 4 GHz – Q = 25 @ 2 GHz for a 800 pH device – and clearly outperforms classical planar architecture considered in most of the integrated circuit processes. Two different modeling approaches (compact modeling and EM modeling) are then proposed in order to speed-up their design implementation in a typical CAD design flow. Based on the available data, a good agreement is shown between and simulated data.

Keywords

ModelingSimulation and characterizations of devices and circuitsPassive components and circuitsSi-based devices and IC technologies
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 4 , August 2013 , pp. 463 - 476
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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