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A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links

Published online by Cambridge University Press:  11 February 2016

Rocco Giofrè*
Affiliation:
Electronic Engineering Department, University of Roma Tor Vergata, 00133 Roma, Italy. Phone: +39 06 7259 7346
Paolo Colantonio
Affiliation:
Electronic Engineering Department, University of Roma Tor Vergata, 00133 Roma, Italy. Phone: +39 06 7259 7346
Franco Giannini
Affiliation:
Electronic Engineering Department, University of Roma Tor Vergata, 00133 Roma, Italy. Phone: +39 06 7259 7346
Chiara Ramella
Affiliation:
Electronic Engineering Department, University of Roma Tor Vergata, 00133 Roma, Italy. Phone: +39 06 7259 7346
Vittorio Camarchia
Affiliation:
Electronics and Telecommunications Department, Politecnico di Torino, 10129 Torino, Italy
Mustazar Iqbal
Affiliation:
Electronics and Telecommunications Department, Politecnico di Torino, 10129 Torino, Italy
Marco Pirola
Affiliation:
Electronics and Telecommunications Department, Politecnico di Torino, 10129 Torino, Italy
Roberto Quaglia
Affiliation:
Electronics and Telecommunications Department, Politecnico di Torino, 10129 Torino, Italy School of Engineering, Cardiff University, Cardiff, CF24 3AA, UK
*
Corresponding author:R. Giofrè Email: giofr@ing.uniroma2.it

Abstract

A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated input signal and comparing the spectral responses of the two amplifiers with and without digital predistortion. A saturated output power of 40 dBm has been achieved by both circuits. At 6 dB of output back-off, the Doherty amplifier shows an efficiency of 33%, 10 points higher than that of the class-AB module. On the other hand, system level measurements show that, adopting the same predistorter complexity to comply with the reference standard emission masks, the Doherty amplifier needs at least 1 dB of extra back-off. This negatively affects its efficiency, therefore reducing the advantages it can claim with respect to the class-AB amplifier in continuous wave condition.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

REFERENCES

[1] Bhushan, N. et al. : Network densification: the dominant theme for wireless evolution into 5G. IEEE Commun. Mag., 52 (2) (2014), 8289.CrossRefGoogle Scholar
[2] Colantonio, P.; Giannini, F.; Limiti, E.: High Efficiency RF and Microwave Solid State Power Amplifiers, ser. Microwave and Optical Engineering, John Wiley & Sons, Chichester, UK, 2009.CrossRefGoogle Scholar
[3] Kenington, P.: High linearity RF amplifier design, ser. Artech House Microwave Library, Artech House, Norwood, MA, 2000.Google Scholar
[4] Camarchia, V.; Pirola, M.; Quaglia, R.; Jee, S.; Cho, Y.; Kim, B.: The Doherty power amplifier: review of recent solutions and trends. IEEE Trans. Microw. Theory Tech., 63 (2) (2015), 559571.Google Scholar
[5] Kim, B.; Moon, J.; Kim, I.: Efficiently amplified. IEEE Microw. Mag., 11 (5) (2010), 87100.Google Scholar
[6] Ghannouchi, F.M.; Hammi, O.: Behavioral modeling and predistortion. IEEE Microw. Mag., 10 (7) (2010), 5264.CrossRefGoogle Scholar
[7] Little, S.: Is microwave backhaul up to the 4 G task. IEEE Microw. Mag., 10 (5) (2009), 6774.Google Scholar
[8] Camarchia, V. et al. : Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications. Int. J. RF Microw. Comp. Aided Eng., 16 (1) (2006), 7080.Google Scholar
[9] Reveyrand, T. et al. : GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project. Int. J. Microw. Wireless Technol., 2 (1) (2010), 5161.Google Scholar
[10] Camarchia, V. et al. : High-efficiency 7 GHz Doherty GaN MMIC power amplifiers for microwave backhaul radio links. IEEE Trans. Electron Devices, 60 (10) (2013), 35923595.CrossRefGoogle Scholar
[11] Kistchinsky, A.: GaN solid-state microwave power amplifiers – State-of-the-art and future trends, in Proc. IEEE Crimean Microw. Telecom. Tech. CriMiCo, 14–18 September 2009, 11–16.Google Scholar
[12]Harmonized European Standard ETSI EN 302 217-2-2. “Fixed Radio Systems; Characteristics and requirements for point-to-point equipment and antennas; Part 2-2: Digital systems operating in frequency bands where frequency co-ordination is applied,” April 2014. Available at www.etsi.org, ref. REN/ATTM-04025.Google Scholar
[13]European Standard ETSI EN 302 217-2-1. “Fixed Radio Systems; Characteristics and requirements for point-to-point equipment and antennas; Part 2-1: System dependent requirements for digital systems operating in frequency bands where frequency co-ordination is applied,” December 2014. Available at www.etsi.org, ref. REN/ATTM-04017.Google Scholar
[14] Giofré, R. et al. : GaN MMICs for microwave backhaul: Doherty vs. combined class-AB power amplifier, in Proc. of European Microwave Conf. (EuMiC), Paris, France, 2015.Google Scholar
[15] Giofré, R.; Piazzon, L.; Colantonio, P.; Giannini, F.: A closed-form design technique for ultra-wideband Doherty power amplifiers. IEEE Trans. Microw. Theory Tech., 62 (12) (2014), 34143424.Google Scholar
[16] Shelton, J.; Mosko, J.A.: Synthesis and design of wide-band equal-ripple TEM directional couplers and fixed phase shifters. IEEE Trans. Microw. Theory Tech., 14 (10) (1966), 462473.CrossRefGoogle Scholar
[17] Piazzon, L. et al. : Effect of load modulation on phase distortion in Doherty Power Amplifiers. IEEE Microw. Wireless Compon. Lett., 24 (7) (2014), 505507.Google Scholar
[18] Quaglia, R.; Tao, J.; Vittorio, C.: Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers, in Proc. of European Microwave Conf. (EuMiC), Rome, 6–7 October 2014, 488491.CrossRefGoogle Scholar
[19] Behtash, R. et al. : Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band, in 2004 IEEE MTT-S Int. Microwave Symp. Digest, vol. 3, June 2004, 16571659.Google Scholar
[20] Klockenhoff, H.; Behtash, R.; Wurfl, J.; Heinrich, W.; Trankle, G.: A compact 16 Watt X-Band GaN-MMIC power amplifier, in IEEE MTT-S Int. Microw. Symp. Digest, June 2006, 18461849.Google Scholar
[21] Quaglia, R.; Camarchia, V.; Pirola, M.; Moreno Rubio, J.; Ghione, G.: Linear GaN MMIC combined power amplifiers for 7-GHz microwave backhaul. IEEE Trans. Microw. Theory Tech. 62 (11) (2014), 27002710.Google Scholar
[22] Gustafsson, D.; Andersson, C.; Fager, C.: A GaN MMIC modified Doherty power amplifier with large bandwidth and reconfigurable efficiency. IEEE Trans. Microw. Theory Tech. 62 (12) (2014), 30063016.CrossRefGoogle Scholar
[23] Colantonio, P.; Giannini, F.; Giofré, R.; Limiti, E.; Piazzon, L.: An X-Band GaAs MMIC Doherty Power Amplifier, Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010, April 2010, 4144.CrossRefGoogle Scholar
[24] Gustafsson, D.; Cahuana, J.C.; Kuylenstierna, D.; Angelov, I.; Rorsman, N.; Fager, C.: A wideband and compact GaN MMIC Doherty amplifier for microwave link applications. IEEE Trans. Microw. Theory Tech., 61 (2) (2013), 922930.Google Scholar
[25] Camarchia, V.; Fang, J.; Moreno Rubio, J.; Pirola, M.; Quaglia, R.: 7 GHz MMIC GaN Doherty power amplifier with 47% efficiency at 7 dB output back-off. IEEE Microw. Wireless Compon. Lett., 23 (1) (2013), 3436.Google Scholar
[26] Piazzon, L.; Colantonio, P.; Giannini, F.; Giofré, R.: 15% Bandwidth 7 GHz GaN-MMIC Doherty amplifier with enhanced auxiliary chain. Microw. Opt. Technol. Lett., Wiley, 56 (2) (2014), 502504.CrossRefGoogle Scholar