Analytic description, measurements, and modeling of 3D-embedded silicon inductance for High-Performance Hybrid Systems Applications
Published online by Cambridge University Press: 21 March 2013
In this paper, the design and the measurements of three-dimensional through silicon vias (TSVs) based-integrated solenoids embedded within high-resistive silicon is presented. Prior to silicon implementation, a rigorous theoretical analysis is proposed to put in obviousness the advantages of using such coil architecture for L and S band applications. This analysis, demonstrates a clear reduction of the footprint passive function lying on the external substrate together with a reduced capacitive coupling with the local environment. Two-port radio frequency measurements have been performed in a wide-frequency range (100 MHz – 50 GHz) in order to support the theoretical investigations. Solenoids exhibit high-quality factors below 4 GHz – Q = 25 @ 2 GHz for a 800 pH device – and clearly outperforms classical planar architecture considered in most of the integrated circuit processes. Two different modeling approaches (compact modeling and EM modeling) are then proposed in order to speed-up their design implementation in a typical CAD design flow. Based on the available data, a good agreement is shown between and simulated data.
- Research Papers
- International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 4 , August 2013 , pp. 463 - 476
- Copyright © Cambridge University Press and the European Microwave Association 2013