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  • Print publication year: 2018
  • Online publication date: June 2018

5 - Linear Device Modeling

[1]Nedeljkovic, S. R., Clausen, W. J., Kharabi, F., McMacken, J. R. F., and Gering, J. M., “Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling,” chapter 3 in Nonlinear Model Parameter Extraction Techniques, Rudolph, M., Fager, C., and Root, D. E., editors, Cambridge University Press, 2012.
[2]Root, D. E., Xu, J., and Iwamoto, M., “Device modeling for FAB engineers: survey of selected foundations,” 2015 CS-MANTECH Workshop: “RF for Device and Fab Engineers: Basic and Advanced Measurements, Device Modeling, Power Amplifier Design, and RF Packaging,” Scottsdale, AZ, May 2015.
[3]Fisher, G., Cascade Microtech Europe Ltd, “A guide to successful on wafer millimeter wave RF characterization,” www.keysight.com/upload/cmc_upload/All/OnWaferMillimeter.pdf
[4]Rumiantsev, A., “A Practical Guide for Accurate Broadband On-Wafer Calibration in RF Silicon Applications,” 1st International MOS-AK Meeting, Dec.13, 2008, San Francisco, CA, http://www.mos-ak.org/sanfrancisco/papers/09_Rumiantsev_MOS-AK_SF08.pdf
[5]Lord, A., Cascade Microtech Europe Ltd, “Advanced RF Calibration Techniques,” June 20–21, 2002, Wroclaw, Poland. http://ekv.epfl.ch/files/content/sites/ekv/files/mos-ak/wroclaw/MOS-AK_AL.pdf
[6]Hughes, B.; Tasker, P. J., “Bias dependence of the MODFET intrinsic model elements values at microwave frequencies,” IEEE Trans. Electron Devices, vol. 36, no. 10, Oct. 1989, pp. 22672273.
[7]Dambrine, G., Cappy, A., Heliodore, F., and Playez, E., “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microw. Theory Techn., vol. 36, no. 7, Jul. 1988, pp. 11511159.
[8]Wood, J. and Root, D. E., “Bias-dependent linear scalable millimeter-wave FET model,” IEEE Trans. Microw. Theory Techn., vol. 48, no. 12, Dec. 2000, pp. 23522360.
[9]Zarate de Landa, A., Zúñiga-Juárez, J. E., Loo-Yau, J., Reynoso-Hernández, J. A., Maya-Sánchez, M. C., and del Valle-Padilla, J. L., “Advances in linear modeling of microwave transistors,” IEEE Microw. Mag., April 2009, pp. 100–111.
[10]de Landa, A. Zarate; Zúñiga-Juárez, J. E.; Loo-Yau, J.; Reynoso-Hernández, J. A.; Maya-Sánchez, M. C.; Piner, E. L., and Linthicum, K. J., “A new and better method for extracting the parasitic elements of the on-wafer GaN transistors,” IEEE MTT-S International Symposium Digest, Honolulu, Hawaii, June 3–8, 2007, pp. 791–794.
[11]Vogel, R., “Determination of the MESFET resistive parameters using RF-wafer probing,” 17th European Microwave Conference, September 1987 pp. 616–621.
[12]Lee, K. W., Lee, K., Shur, M. S., Vu, T. T., Roberts, P. C. T., and Helix, M. J., “Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FETs,” IEEE Transactions on Electron Devices, vol. ED-32, no. 5, May 1985, pp. 987992.
[13]Xu, J., Jones, R., Harris, S. A., Nielsen, T., and Root, D. E., “Dynamic FET model – DynaFET – for GaN transistors from NVNA active source injection measurements,” International Microwave Symposium Digest, Tampa, FL. June 2014.
[14]Lin, F. and Kompa, G., “FET model parameter extraction based on optimization data-fitting and bi-directional search – a new concept,” IEEE Trans. Microw. Theory Techn., vol 42, no 7, 1994, pp. 11141121.
[15]Fager, C., Andersson, K., Ferndahl, M., “Uncertainties in small-signal equivalent circuit modeling,” chapter 4 in “Nonlinear Model Parameter Extraction Techniques,” Rudolph, M., Fager, C., and Root, D. E., editors, Cambridge University Press, 2012.
[16]Fager, C., Linner, P., Pedro, J., “Optimal parameter extraction and uncertainty estimation in intrinsic FET small-signal models,” IEEE Trans. Microw. Theory Techn., vol. 50, December 2002, pp. 27972803.
[17]Smith, D. H., Fraser, A., and O’Neil, J., “Measurement and prediction of operating temperatures for GaAs ICs,” Proc. SEMITHERM, Dec. 1986, pp. 1–20.