Skip to main content Accessibility help
×
Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-17T17:24:38.345Z Has data issue: false hasContentIssue false

11 - Self-healing for silicon-based mm-wave power amplifiers

Published online by Cambridge University Press:  05 April 2016

Steven M. Bowers
Affiliation:
University of Virginia
Kaushik Sengupta
Affiliation:
Princeton University
Kaushik Dasgupta
Affiliation:
Intel
Ali Hajimiri
Affiliation:
California Institute of Technology
Hossein Hashemi
Affiliation:
University of Southern California
Sanjay Raman
Affiliation:
Virginia Polytechnic Institute and State University
Get access

Summary

Background

Motivation for self-healing

The rise of digital computation and personal computing has led to continual advances in semiconductor technologies at an exponential pace, following Moore's Law. In each successive processing node, the minimum feature size decreases, improving performance, but also bringing some trade-offs in terms of variation between chips as well as between transistors on the same chip [1–4]. One major source of this variation is random dopant fluctuations (RDFs) in the channel of a transistor [5, 6]. A typical 130-nm complementary metal–oxide–silicon (CMOS) process will have several hundreds of dopant atoms in the channel region. In contrast, in a 32-nm process, only a few tens of dopants control important transistor characteristics like threshold voltage, etc. A second source of variation is line-width control in these advanced processes. Line-edge roughness (LER) caused by lithographic and etching steps directly impacts the overlap capacitances as well as other device parameters like drain-induced barrier lowering (DIBL) and threshold voltage [7]. Figure 11.1 shows how threshold voltage variations scale with process technology node. As can be seen, the variation is much more manageable at larger nodes, and the variation is expected to continue to increase at smaller nodes as the total number of dopant atoms as well as the channel length reduces even further. If the variation can be dealt with, however, the smaller transistors can enable new applications for mm-wave power generation, enabling transmitters and amplifiers at higher frequencies, powers, and efficiencies. Another issue that analog designers face is that, due to the digital processing market being the driving force pushing the scaling, the models provided by the foundries early in the node's development stage are primarily designed for digital use, and are often not reliable at mm-wave frequencies.

In addition to these static sources of variation, dynamic temperature variations across the same die can give rise to varying sub-threshold leakage, supply voltage variations thereby directly affecting overall system performance. Variability in operating environment of power generation systems can adversely affect their performance. This comes in the form of temperature variation, degradation due to aging [8], and, in the case of power amplifiers that are driving antennas, load impedance mismatch caused by voltage standing wave ratio (VSWR) events [9] that occur when objects in the environment interactin the near field of the antenna, as can be seen in Fig. 11.2.

Type
Chapter
Information
Publisher: Cambridge University Press
Print publication year: 2016

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] S., Nassif, N., Mehta, and Y., Cao, “A resilience roadmap,” in Design Automation Test in Europe Conference Exhibition, 2010, pp. 1011–1016.Google Scholar
[2] K., Bernstein, D. J., Frank, A. E., Gattiker, et al., “High-performance CMOS variability in the 65-nm regime and beyond,” IBM J. of Research and Development, vol. 50, no. 4.5, pp. 433–449, July 2006.Google Scholar
[3] T., Mizuno, J., Okumtura, and A., Toriumi, “Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs,” IEEE Trans. on Electron Devices, vol. 41, no. 11, pp. 2216–2221, Nov. 1994.Google Scholar
[4] P., Stolk and D., Klaassen, “The effect of statistical dopant fluctuations on MOS device performance,” in International Electron Devices Meeting, IEDM, Dec. 1996, pp. 627–630.Google Scholar
[5] S., Borkar, “Designing reliable systems from unreliable components: the challenges of transistor variability and degradation,” IEEE Micro, vol. 25, no. 6, pp. 10–16, 2005.Google Scholar
[6] K., Kuhn, “CMOS transistor scaling past 32 nm and implications on variation,” in IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2010, pp. 241–246.Google Scholar
[7] A., Asenov, “Simulation of statistical variability in nano MOSFETs,” in IEEE Symposium on VLSI Technology, 2007, pp. 86–87.Google Scholar
[8] M., Ruberto, O., Degani, S., Wail, et al., “A reliability-aware RF power amplifier design for CMOS radio chip integration,” in IEEE International Reliability Physics Symposium, 2008, pp. 536–540.Google Scholar
[9] O., Hammi, J., Sirois, S., Boumaiza, and F., Ghannouchi, “Study of the output load mismatch effects on the load modulation of Doherty power amplifiers,” in IEEE Radio and Wireless Symposium, 2007, pp. 393–394a.Google Scholar
[10] A., Natarajan, A., Komijani, X., Guan, A., Babakhani, and A., Hajimiri, “A 77-GHz phasedarray transceiver with on-chip antennas in silicon: Transmitter and local LO-path phase shifting,” IEEE J. of Solid-State Circuits, vol. 41, no. 12, pp. 2807–2819, Dec. 2006.Google Scholar
[11] A., Babakhani, X., Guan, A., Komijani, A., Natarajan, and A., Hajimiri, “A 77-GHz phasedarray transceiver with on-chip antennas in silicon: Receiver and antennas,” IEEE J. of Solid- State Circuits, vol. 41, no. 12, pp. 2795–2806, Dec. 2006.Google Scholar
[12] H., Hashemi, X., Guan, A., Komijani, and A., Hajimiri, “A 24-GHz SiGe phased-array receiver-LO phase-shifting approach,” IEEE Trans. on Microwave Theory and Techniques, vol. 53, no. 2, pp. 614–626, Feb. 2005.Google Scholar
[13] A., Natarajan, A., Komijani, and A., Hajimiri, “A 24 GHz phased-array transmitter in 0.18 µm CMOS,” in IEEE Int. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), Feb. 2005, pp. 212–594, Vol. 1.Google Scholar
[14] S., Alalusi and R., Brodersen, “A 60 GHz phased array in CMOS,” in IEEE Custom Integrated Circuits Conference (CICC), Sept. 2006, pp. 393–396.Google Scholar
[15] A., Valdes-Garcia, S. T., Nicolson, J.-W., Lai, et al., “A fully integrated 16-element phasedarray transmitter in SiGe BiCMOS for 60-GHz communications,” IEEE J. of Solid-State Circuits, vol. 45, no. 12, pp. 2757–2773, Dec. 2010.Google Scholar
[16] S. M., Bowers, K., Sengupta, K., Dasgupta, B. D., Parker, and A., Hajimiri, “Integrated self-healing for mm-wave power amplifiers,” IEEE Trans. on Microwave Theory and Techniques, vol. 61, no. 3, pp. 1301–1315, 2013.Google Scholar
[17] R., Kumar and V., Kursun, “Voltage optimization for temperature variation insensitive CMOS circuits,” in 48th Midwest Symposium on Circuits and Systems, 2005, pp. 476–479, Vol. 1.Google Scholar
[18] S., Sakurai and M., Ismail, “Robust design of rail-to-rail CMOS operational amplifiers for a low power supply voltage,” IEEE Journal of Solid-State Circuits, vol. 31, no. 2, pp. 146– 156, 1996.Google Scholar
[19] K., Siwiec, T., Borejko, and W., Pleskacz, “PVT tolerant LC-VCO in 90 nm CMOS technology for GPS/Galileo applications,” in IEEE International Symposium on Design and Diagnostics of Electronic Circuits Systems, 2011, pp. 29–34.Google Scholar
[20] D., Sylvester, D., Blaauw, and E., Karl, “ElastIC: an adaptive self-healing architecture for unpredictable silicon,” IEEE Design Test of Computers, vol. 23, no. 6, pp. 484–490, 2006.Google Scholar
[21] A., Goyal, M., Swaminathan, A., Chatterjee, D., Howard, and J., Cressler, “A new self-healing methodology for RF amplifier circuits based on oscillation principles,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 20, no. 10, pp. 1835–1848, 2012.Google Scholar
[22] J.-C., Liu, A., Tang, N., Wang, et al., “A V-band self-healing power amplifier with adaptive feedback bias control in 65 nm CMOS,” in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2011, pp. 1–4.Google Scholar
[23] S., Yaldiz, V., Calayir, X., Li, et al., “Indirect phase noise sensing for self-healing voltage controlled oscillators,” in IEEE Custom Integrated Circuits Conference (CICC), 2011, pp. 1–4.Google Scholar
[24] K., Jayaraman, Q., Khan, B., Chi, et al., “A self-healing 2.4 GHz LNA with on-chip S11/S21 measurement/calibration for in-situ PVT compensation,” in IEEE Radio Frequency Integrated Circuits Symposium, 2010, pp. 311–314.Google Scholar
[25] F., Bohn, K., Dasgupta, and A., Hajimiri, “Closed-loop spurious tone reduction for selfhealing frequency synthesizers,” in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2011, pp. 1–4.Google Scholar
[26] H., Wang, K., Dasgupta, and A., Hajimiri, “A broadband self-healing phase synthesis scheme,” in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2011, pp. 1–4.Google Scholar
[27] S. M., Bowers, K., Sengupta, K., Dasgupta, and A., Hajimiri, “A fully-integrated self-healing power amplifier,” in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2012, pp. 221–224.Google Scholar
[28] A., Tang, F., Hsiao, D., Murphy, et al., “A low-overhead self-healing embedded system for ensuring high yield and long-term sustainability of 60 GHz 4 Gb/s radio-on-a-chip,” in IEEE Int. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), Feb. 2012, pp. 316–318.Google Scholar
[29] Y., Huang, H., Hsieh, and L., Lu, “A build-in self-test technique for RF low-noise amplifiers,” IEEE Trans. on Microwave Theory and Techniques, vol. 56, no. 5, pp. 1035–1042, 2008.Google Scholar
[30] K., Sengupta, K., Dasgupta, S. M., Bowers, and A., Hajimiri, “On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifier,” in IEEE MTT-S International Microwave Symposium Digest (MTT), June 2012, pp. 1–3.Google Scholar
[31] Q., Yin, W., Eisenstadt, R., Fox, and T., Zhang, “A translinear RMS detector for embedded test of RF ICs,” IEEE Trans. on Instrumentation and Measurement, vol. 54, no. 5, pp. 1708– 1714, 2005.Google Scholar
[32] C. de La, Cruz-Blas, A., Lopez-Martin, A., Carlosena, and J., Ramirez-Angulo, “1.5-V current-mode CMOS true RMS-DC converter based on class-AB transconductors,” IEEE Trans. on Circuits and Systems II : Express Briefs, vol. 52, no. 7, pp. 376–379, 2005.Google Scholar
[33] A., Valdes-Garcia, R., Venkatasubramanian, J., Silva-Martinez, and E., Sanchez-Sinencio, “A broadband CMOS amplitude detector for on-chip RF measurements,” IEEE Transactions on Instrumentation and Measurement, vol. 57, no. 7, pp. 1470–1477, 2008.Google Scholar
[34] S., Cripps, RF Power Amplifiers for Wireless Communications. Artech House Microwave Library, 2006.
[35] Y., Huang, H., Hsieh, and L., Lu, “A low-noise amplifier with integrated current and power sensors for RF BIST applications,” in 25th IEEE VLSI Test Symposium, 2007, pp. 401–408.Google Scholar
[36] F., Cheung and P., Mok, “A monolithic current-mode CMOS DC–DC converter with on-chip current-sensing technique,” IEEE J. of Solid-State Circuits, vol. 39, no. 1, pp. 3–14, 2004.Google Scholar
[37] S., Lee and D., Allstot, “Electrothermal simulation of integrated circuits,” IEEE J. of Solid- State Circuits, vol. 28, no. 12, pp. 1283–1293, 1993.Google Scholar
[38] B., Razavi, Design of Analog CMOS Integrated Circuits. McGraw-Hill, 2001.
[39] S., Park, Y., Palaskas, A., Ravi, R., Bishop, and M., Flynn, “A 3.5 GS/s 5-b flash ADC in 90 nm CMOS,” in IEEE Custom Integrated Circuits Conference (CICC), Sept. 2006, pp. 489–492.Google Scholar
[40] Y.-Z., Lin, Y.-T., Liu, and S.-J., Chang, “A 5-bit 4.2-GS/s flash ADC in 0.13-µm CMOS,” in IEEE Custom Integrated Circuits Conference (CICC), Sept. 2007, pp. 213–216.Google Scholar
[41] J., Li and U.-K., Moon, “A 1.8-V 67-mW 10-bit 100-MS/s pipelined ADC using time-shifted CDS technique,” IEEE J. of Solid-State Circuits, vol. 39, no. 9, pp. 1468–1476, Sept. 2004.Google Scholar
[42] S., Mortezapour and E., Lee, “A 1-V, 8-bit successive approximation ADC in standard CMOS process,” IEEE J. of Solid-State Circuits, vol. 35, no. 4, pp. 642–646, Apr. 2000.Google Scholar
[43] S., Akbay and A., Chatterjee, “Built-in test of RF components using mapped feature extraction sensors,” in Proceedings of IEEE VLSI Test Symposium, 2005, pp. 243–248.Google Scholar
[44] S., Devarakond, V., Natarajan, S., Sen, and A., Chatterjee, “BIST-assisted power aware self healing RF circuits,” in IEEE International Mixed-Signals, Sensors, and Systems Test Workshop, 2009, pp. 1–4.Google Scholar
[45] A., Goyal, M., Swaminathan, A., Chatterjee, D., Howard, and J., Cressler, “A new self-healing methodology for RF amplifier circuits based on oscillation principles,” IEEE Trans. on Very Large Scale Integration (VLSI) Systems, vol. 20, no. 10, pp. 1835–1848, 2012.Google Scholar
[46] J.-C., Liu, R., Berenguer, and M., Chang, “Millimeter-wave self-healing power amplifier with adaptive amplitude and phase linearization in 65-nm CMOS,” IEEE Trans. on Microwave Theory and Techniques, vol. 60, no. 5, pp. 1342–1352, 2012.Google Scholar

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×