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  • Print publication year: 2010
  • Online publication date: July 2014

15 - Reliability science and analysis

Summary

Introduction

We should define what reliability science is. When a device is manufactured to provide a unique function in applications, it is generally expected that the microstructure in the device will be unchanged in its lifetime of use. Unfortunately, this is not true. In electronic device applications, we have to apply an electric field or current. Under a high-current density, electromigration induces changes in microstructure and leads to circuit failure due to opening by void formation or shorting by whisker extrusion. The high-current density also causes joule heating and the temperature rise will lead to thermal stress between different materials having a different thermal expansion coefficient in the device. The stress and temperature gradients will induce atomic diffusion, phase change, and microstructure instability. What is unique in these microstructure changes is that they occur in the domain of non-equilibrium thermodynamics or they are irreversible processes. The basic science to provide an understanding of phase changes in irreversible processes that leads to device failure is reliability science. From the point of view of applications, physical and statistical analyses on the basis of reliability science should be able to predict the lifetime of a device [1–4].

The traditional metallurgical phase changes occur between two equilibrium states, and they are defined under constant temperature and constant pressure, for example the phase change in a piece of solder of eutectic SnPb going from 200°C to 100°C at ambient pressure.

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[1] M., Ohring, Reliability and Failure of Electronic Materials and Devices (Academic Press, San Diego, 1998).
[2] W. J., Bertram, “Yield and reliability,” Ch. 14 of VLSI Technology, ed. S. M., Sze (McGraw-Hill, New York, 1983).
[3] J. R., Black, “Mass transport of Al by momentum exchange with conducting electrons,” Proc. IEEE Int. Rel. Phys. Symp. (1967), 144–59.
[4] M., Shatzkes and J. R., Lloyd, “A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2,” J. Appl. Phys. 9 (1986), 3890–3.
[5] R., Rosenberg and M., Ohring, “Void formation and growth during electromigration in thin films,” J. Appl. Phys. 42 (1971), 5671–9.
[6] J. J., Clement, “Electromigration modeling for integrated circuit interconnect reliability analysis,” IEEE Trans. on Device and Materials Reliability 1 (2001), 33-42.
[7] S., Brandenburg and S., Yeh, Proceedings of Surface Mount International Conference and Exhibition, SMI98, San Jose, CA, Aug. 1998, pp. 337–44.
[8] Everett C. C., Yeh, W. J., Choi, K. N., Tu, P., Elenius and H., Balkan, “Current-crowding-induced electromigration failure in flip chip solder joints,” Appl. Phys. Lett. 80 (4) (2002), 580–2.
[9] Lingyun, Zhang, Shengquan, Ou, Joanne, Huang, K. N., Tu, Stephen, Gee and Luu, Nguyen, “Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints,” Appl. Phys. Lett. 88 (2006), 012106.
[10] S. W., Liang, Y. W., Chang, T. L., Shao, Chih, Chen and K. N., Tu, “Effect of three-dimensional current and temperature distribution on void formation and propagation in flip chip solder joints during electromigration,” Appl. Phys. Lett. 89 (2006), 022117.
[11] T. V., Zaporozhets, A. M., Gusak, K. N., Tu and S. G., Mhaisalkar, “Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration,” J. Appl. Phys. 98, 103508 (2005).
[12] Y.-S., Lai, S., Sathe, C.-L., Kao and C.-W., Lee, “Integrating electrothermal coupling analysis in the calibration of experimental electromigration reliability of flip-chip packages,” in Proceedings of ECTC 2005 (55th Electronic Components and Technology Conference), Lake Buena Vista, FL, USA, 2005, pp. 1421–6.