The first experimental measurements of intense (${\sim }7\times 10^{19}~ {\rm W}~ {\rm cm}^{-2}$) laser-driven terahertz (THz) radiation from a solid target which is preheated by an intense pulse of laser-accelerated protons is reported. The total energy of the THz radiation is found to decrease by approximately a factor of 2 compared to a cold target reference. This is attributed to an increase in the scale length of the preformed plasma, driven by proton heating, at the front surface of the target, where the THz radiation is generated. The results show the importance of controlling the preplasma scale length for THz production.

Canine hookworm infections are endemic worldwide, with zoonotic transmission representing a potentially significant public health concern. This study aimed to investigate hookworm infection and identify the prevalent species from stray and shelter dogs in Guangzhou city, southern China by polymerase chain reaction–restriction fragment length polymorphism (PCR–RFLP) based on internal transcribed spacer (ITS) sequences. From March 2011 to July 2012, fresh faecal samples from a total of 254 dogs were obtained from five locations, namely Conghua, Baiyun, Liwan, Haizhu and Panyu, in Guangzhou. These samples were screened for the presence of hookworm eggs using light microscopy, with an overall prevalence of 29.53% being recorded. The highest prevalence of 45.28% was found in suburban dogs from Conghua compared with lower values recorded in urban dogs in Haizhu (21.43%), Baiyun (18.97%), Panyu (18.18%) and Liwan (15%). The prevalence in stray dogs was significantly higher than that in shelter dogs. PCR-RFLP analysis showed that 57.33% were detected as single hookworm infections with Ancyclostoma caninum, and 22.67% as A. ceylanicum, while 20% were mixed infections. This suggests that high prevalences of both hookworm species in stray and shelter dogs in China pose a potential risk of transmission from pet dogs to humans.

Terrestrial palynomorphs from the glaciomarine Pagodroma Group provide the first stratigraphically-constrained record of Cenozoic terrestrial vegetation for the northern Prince Charles Mountains, East Antarctica. In general, contemporaneous spores and pollen are extremely sparse, but palynological assemblages of the late middle–late Miocene Fisher Bench Formation and Battye Glacier Formation have relatively more abundant Cenozoic spores and pollen compared with those of the Oligocene Mount Johnston Formation and the Pliocene–early Pleistocene Bardin Bluffs Formation. Spore-pollen assemblages from the Battye Glacier Formation and the Fisher Bench Formation are dominated by Chenopodipollis, with a few other accessory angiosperm and podocarp pollen, pteridophyte and bryophyte spores, and algal cysts, reflecting a low diversity herb-tundra vegetation and a climate similar to the present-day cool to cold sub-Antarctic regions. Reworked Permian–Triassic miospores in Amery oasis (unofficial name) sediments probably indicate local provenance from the Amery Group but Jurassic–Cretaceous and possible early Cenozoic miospores reflect an unknown source.

The chalcid, Oomyzus sokolowskii Kurdjumov has been recorded in many parts of the world as a major larval–pupal, gregarious endoparasitoid of the diamondback moth, Plutella xylostella (Linnaeus), a serious pest of brassica vegetable crops worldwide. This study investigated intraspecific variation between two populations of O. sokiolowskii, one from Cape Verde Islands, West Africa and the other from Hangzhou, China. In all crosses and backcrosses between the two geographical populations, the numbers of progeny and sex ratio of progeny were similar to those obtained within each of the populations, demonstrating complete reproductive compatibility between the two populations. The two populations showed similar responses to temperature with respect to development time and survival of immature stages. Observations on the interactions between the two O. sokolowskii populations and Cotesia plutellae (Kurdjumov), another major parasitoid of P. xylostella, showed that neither population could achieve successful parasitism of P. xylostella larvae already parasitized by C. plutellae. However, both O. sokolowskii populations could achieve hyperparasitism by ovipositing into a mid-late stage larva of C. plutellae developing inside the primary host. Contrary to earlier reports, no evidence of intraspecific variations in ability to hyperparasitize between these two populations of O. sokolowskii was found.

The stress depth distribution in the silicon substrate under thin thermal oxide layers has been measured using the photoelastic technique. With the high sensitivity and improved spatial resolution of a newly developed low level birefringence detection system, it is confirmed that the stress distribution deviates significantly from the linear distribution predicted by classical bi-metallic strip theory. The deviation can be attributed to arising from Si self-interstitial injection during the thermal oxidation process. Long term changes in the stress distribution with time have also been observed and the changes can be understood in terms of point defect movements under the stress field in the substrate. Our preliminary results have demonstrated how we can probe microscopic point defect processes in thin film SiO2/Si substrate systems using a macroscopic photoelastic stress measurement technique.

GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 μm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

Internal stresses inevitably arise in integrated microstructures. This paper reviews a fracture mechanics approach to devising design rules to avert cracking. The smallness of the feature size permits a strategy different from that conventionally used to analyze the fracture of bulk materials. In an integrated microstructure, high tensile stress is localized in small regions. The elastic energy stored in each region scales with its volume. The surface energy associated with the creation of a crack scales with the surface area of the crack. Thermodynamics dictates that a flaw cannot grow if the stored elastic energy is lower than the created surface energy. Consequently, for a sufficiently small feature size, the volume-to-area ratio is small, and no flaw can grow. Our design rules do not depend on flaw size. They are deterministic, and rely on well-specified geometric and physical parameters. Furthermore, the stress singularity at corners does not cause any particular difficulty. As an example, the thermal misfit cracking in a multilevel interconnect test structure is investigated.

The microstructure and composition of TiN films, formed by ion beam enhanced deposition (IBED) with different energy (40 keV and 90 keV) xenon ion bombardment and by simple physical vapor deposition (hereafter S-PVD) without any ion beam enhancement, and the interfaces between TiN films and Si substrates have been studied by cross-sectional view analytical electron microscopy in this work. Both the IBED TiN films prepared by Xe+ bombardment with either 40 keV or 90 keV energy ions and the S-PVD TiN film consist of nanocrystals. The TEM observations in the S-PVD case reveal an amorphous layer and a mixed layer of TiN grains and amorphous material at the TiN/Si interface. The thicknesses of the amorphous layer and the mixed layer are about 210 nm and at least 40 nm, respectively. Upon 40 keV Xe+ bombardment, an amorphous Si transition layer of about 50 nm thickness is found at the TiN/Si interface, and the TiN grains close to the TiN/Si interface are of weak preferred orientation. Upon 90 keV Xe+ bombardment, amorphous TiN and Si layers are found with a total thickness of 80 nm at the TiN/Si interface, and the TiN grains near the TiN/Si interface are of preferred orientation [111]TiN ‖ [001]Si. The energy of xenon ion bombardment has a strong effect on the microstructural characteristics of TiN films and the interfaces between the TiN films and the Si substrates, as well as the size and the preferred orientation of TiN grains.