25 results
Mesoporous, microporous and nanowired: electron microscopy of aerogel composites
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- Microscopy and Microanalysis / Volume 8 / Issue S02 / August 2002
- Published online by Cambridge University Press:
- 01 August 2002, pp. 1240-1241
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- August 2002
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Transmission Electron Microscopy Studies of the Nanoscale Structure and Chemistry of Pt50Ru50 Electrocatalysts
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- Microscopy and Microanalysis / Volume 8 / Issue 1 / February 2002
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- 28 March 2002, pp. 50-57
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- February 2002
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Nanoscale Structural and Chemical Segregation in Pt50Ru50 Electrocatalysts
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- Microscopy and Microanalysis / Volume 7 / Issue S2 / August 2001
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- 02 July 2020, pp. 1112-1113
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- August 2001
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Characterization of very low defect-density free-standing GaN Substrate Grown by Hydride-Vapor-Phase-Epitaxy.
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- MRS Online Proceedings Library Archive / Volume 680 / 2001
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- 21 March 2011, E2.3
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- 2001
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Mg Segregation, Difficulties of P-Doping in GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 500-506
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- 2000
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
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- 13 June 2014, pp. 398-404
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- 2000
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TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
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- 15 March 2011, T6.14.1
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- 2000
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 294-300
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- 2000
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Atomic Scale Analysis of InGaN Multi-Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
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- 10 February 2011, 357
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- 1999
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD.
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.77
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- 1999
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Mg Segregation, Difficulties of P-Doping in GaN
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W9.7
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- 1999
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W5.8
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- 1999
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TEM Study of Defects in Laterally Overgrown GaN Layers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 459-464
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- 1999
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Polarity of GaN
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
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- 10 February 2011, 363
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- 1998
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Tem Study of Defects in Laterally Overgrown GaN Layers
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 15 February 2011, G4.6
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- 1998
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Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 375
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- 1997
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Effect of Si Doping on The Structure of Gan
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
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- 15 February 2011, 487
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- 1996
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Nano-Tubes in GaN
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 417
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- 1996
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Relation Between Structure and Carrier Lifetime in As-Implanted GaAs
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- MRS Online Proceedings Library Archive / Volume 378 / 1995
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- 26 February 2011, 677
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- 1995
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Structural Defects in Heteroepitaxial and Homoepitaxial GaN
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
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- 21 February 2011, 351
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- 1995
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