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Polarity of GaN

Published online by Cambridge University Press:  10 February 2011

Z. Liliental-Weber ,
M. Benamara ,
O. Richter ,
W. Swider ,
J. Washburn ,
I. Grzegory ,
S. Porowski ,
J. W. Yang  and
S. Nakamura
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; USA
M. Benamara
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; USA
O. Richter
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; USA
W. Swider
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; USA
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; USA
I. Grzegory
Affiliation:
High Pressure Research Center “Unipress,” Polish Academy of Sciences, Warsaw, Poland
S. Porowski
Affiliation:
High Pressure Research Center “Unipress,” Polish Academy of Sciences, Warsaw, Poland
J. W. Yang
Affiliation:
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, MN 55449, USA
S. Nakamura
Affiliation:
Nichia Chemical Industries Ltd, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

Convergent beam electron diffraction (CBED) was applied to study polarity of GaN heterolayers grown by MOCVD on sapphire and SiC substrates and also mechano-chemically polished bulk GaN platelet crystals grown from Ga melt under hydrostatic pressure of N. Heterolayers of GaN grown on both types of substrates showed (0001) Ga polarity, e.g. Ga to N along c-axis. Mechano-chemical etching of bulk GaN platelet crystals leaves one surface smooth and the opposite surface rough with visible damage caused by mechanical polishing. CBED studies showed that the smooth surface has (0001) N polarity, confirming our earlier studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 363
Copyright
Copyright © Materials Research Society 1998

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References

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