14 results
Investigation of Passivation Effects in InP Hemt Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 271
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- 1995
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Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer
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- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 59
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- 1993
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Optimization of Ohmic Contacts on Lattice-Matched and Pseudomorphic AllnAs/InGaAs/InP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 326 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 463
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- 1993
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Influence of CH4/H2 Reactive Ion Etching on Deep Levels in Si-Doped AlxGa1−xAs (x=0.25)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 197
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- 1993
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Enhancement of the Metal/Si-Doped AlGaAs Schottky Barrier Height by CH4/H2 Reactive Ion Etching
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 211
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- 1993
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Electric and Magnetic Transport in Ion-Beam Synthesised α-FeSi2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 121
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- 1993
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Doping and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 260 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 355
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- 1992
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Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 279 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 869
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- 1992
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Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 355
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- 1991
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Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 361
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- 1991
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On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System
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- Journal:
- MRS Online Proceedings Library Archive / Volume 181 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 345
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- 1990
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Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 181 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 411
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- 1990
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Characterization of Pulsed Laser Beam Mixed AuTe/GaAs Ohmic Contacts
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- Journal:
- MRS Online Proceedings Library Archive / Volume 157 / 1989
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- 25 February 2011, 413
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- 1989
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Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 457
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- 1987
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