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Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

Published online by Cambridge University Press:  26 February 2011

R. Pereira ,
M. Van Hove ,
W. De Raedt ,
C. Van Hoof ,
G. Borghs ,
M. Van Rossum ,
R. H. Braspenning ,
T. J. Eijkemans ,
C. M. Van Es  and
J. H. Wolter
R. Pereira
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Hove
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
W. De Raedt
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
C. Van Hoof
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
G. Borghs
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Rossum
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
R. H. Braspenning
Affiliation:
Eindhoven University of Technology, PO Box 513, NL-5600 Eindhoven, The Netherlands
T. J. Eijkemans
Affiliation:
Eindhoven University of Technology, PO Box 513, NL-5600 Eindhoven, The Netherlands
C. M. Van Es
Affiliation:
Eindhoven University of Technology, PO Box 513, NL-5600 Eindhoven, The Netherlands
J. H. Wolter
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.

The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 361
Copyright
Copyright © Materials Research Society 1992

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References

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