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Doping and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems

Published online by Cambridge University Press:  25 February 2011

K. Wuyts ,
J. Watté ,
R. E. Silverans ,
H. MüNder ,
M. G. Berger ,
H. Luth ,
M. Van Hove  and
M. Van Rossum
K. Wuyts
Affiliation:
Instituut voor Kern- en Stralingsfysika, K. U. Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
J. Watté
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
R. E. Silverans
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
H. MüNder
Affiliation:
Institut für Schicht-und Ionentechnik, KFA Jülich, Postfach 1913, D-5170 Jülich, Germany
M. G. Berger
Affiliation:
Institut für Schicht-und Ionentechnik, KFA Jülich, Postfach 1913, D-5170 Jülich, Germany
H. Luth
Affiliation:
Institut für Schicht-und Ionentechnik, KFA Jülich, Postfach 1913, D-5170 Jülich, Germany
M. Van Hove
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are presented. The data and those reported in literature on the AuGe- and Ge/Pd- GaAs systems are argued to be more in agreement with the graded crystalline heterojunction concept (the formation of n+-Ge/GaAs, n+Ga2Te3/GaAs junctions) than with the doping model (the formation of n+-GaAs).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 355
Copyright
Copyright © Materials Research Society 1992

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References

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