5 results
Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF32-02
- Print publication:
- 2005
-
- Article
- Export citation
Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.14
- Print publication:
- 2004
-
- Article
- Export citation
High-pressure investigation of InGan quantum wells.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 399
- Print publication:
- 1998
-
- Article
- Export citation
Cubic Inn Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 697
- Print publication:
- 1997
-
- Article
- Export citation
Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 519
- Print publication:
- 1996
-
- Article
- Export citation