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Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate

Published online by Cambridge University Press:  01 February 2011

Matthias Dworzak ,
Thomas Stempel ,
Axel Hoffmann ,
Gijs Franssen ,
Tadeusz Suski ,
R. Czernecki ,
M. Leszczynski  and
I. Grzegory
Matthias Dworzak
Affiliation:
dworzak@physik.tu-berlin.de
Thomas Stempel
Affiliation:
thomas.stempel@iwanuschka.de
Axel Hoffmann
Affiliation:
hoffmann@physik.tu-berlin.de
Gijs Franssen
Affiliation:
gijs@unipress.waw.pl
Tadeusz Suski
Affiliation:
tadek@unipress.waw.pl
R. Czernecki
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
M. Leszczynski
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
I. Grzegory
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
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Abstract

Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumi-nescence efficiency in these structures strongly depends on the intensity of carrier excitation. While at low excitation densities the recombination of excited carriers is governed by local-ization effects the behavior drastically changes at higher densities. At room temperature a suppression of nonradiative recombination could be observed that leads to an super linear increase of the luminescence.

Keywords

III-Vnanostructureluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF32-02
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES:

1. Nakamura, S., Fasol, G., The Blue Laser Diode (Springer, Berlin 1997).CrossRefGoogle Scholar
2. O'Donnel, K.P., Martin, R.W., Middleton, P.G., Phys. Rev. Lett. 82, 237 (1999).CrossRefGoogle Scholar
3. Grzegory, I., Boćkowski, M., Krukowski, S., Łucznik, B., Wróblewski, M., Weyher, J. L., Leszczynski, M., Prystawko, P., Czernecki, R., Lehnert, J., Nowak, G., Perlin, P., Teisseyre, H., Purgal, W., Krupczynski, W., Suski, T., Dmowski, L., Litwin-Staszewska, E., Skierbiszewski, C., Łepkowski, S., and Porowski, S., Acta Phys. Pol. A 100, 229 (2001).CrossRefGoogle Scholar
4. Franssen, G., Suski, T., Perlin, P., Bohdan, R., Bercha, A., Trzeciakowski, W., Makarowa, I., Prystawko, P., Leszciynski, M., Grzegory, I., Porowski, S., Kokenyesi, S., Appl. Phys. Lett. 87, 041109 (2005).CrossRefGoogle Scholar
5. Christen, J., Bimberg, D., Phys. Rev. B 42, 7213 (1990).CrossRefGoogle Scholar
6. Zimmermann, R., Runge, E., Phys. Stat. Sol. (a) 164, 511 (1997).3.0.CO;2-C>CrossRef3.0.CO;2-C>Google Scholar
7. Bell, A., Christen, J., Bertram, F., Ponce, F., Marui, H., and Tanaka, S., Appl. Phys. Lett 84, 58 (2004).CrossRefGoogle Scholar
8. Gurioli, M., Vinattieri, A., Colocci, M., Deparis, C., Massies, J., Neu, G., Bosacchi, A., Franchi, S., Phys. Rev. B 44, 3115 (1991)CrossRefGoogle Scholar