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We report the microstructural features of GdBa2Cu3O7-δ (GdBCO) coated conductors (CCs) on LaMnO3 (LMO)-buffered IBAD MgO template, produced by the Reactive Co-Evaporation Deposition & Reaction (RCE-DR) process. Analysis results by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed that a lot of elongated round second phase particles of 70-150nm size within the GdBCO matrix were the Gd2O3 phase, a small amount of Cu-O phase were also trapped in the GdBCO matrix, and a thick layer of Cu-excessive Ba-Cu-O phase was found on the top surface of the GdBCO film, suggesting that the GdBCO film might be grown from Gd2O3 and liquid phase by a peritectic recombination. While both the GdBCO film and some Gd2O3 particles grown on the LMO-buffer layer were biaxially textured, the Gd2O3 particles fully trapped in the GdBCO matrix were randomly oriented. The Gd2O3 particles located at the interface between the GdBCO and LMO buffer layer exhibited the following crystallographic orientation relationship: LMO  // GdBCO  // Gd2O3 ; LMO  // GdBCO  // Gd2O3 .
We report the microstructures and dielectric properties of Ca1-xSrxCu3Ti4O12 (C1-xSxCTO, 0≤x≤1) ceramics sintered at the various sintering temperatures ranging from 1000 to 1060˚C in air. The linear increase in lattice parameter in C1-xSxCTO (0≤x≤1) ceramics is observable for the full range of substitution. However, the second phases of SrTiO3 and CuO start to occur from the composition of x=0.8, implying that a stoichiometric SrCu3Ti4O12 (SCTO) compound may not exist. While the C0.6S0.4CTO and C0.4S0.6CTiO samples exhibit relatively lower dielectric constant (εr) of ∼40,000 below 1 kHz, the CaCu3Ti4O12 (CCTO) and SCTO show the extremely high εr values of ~120,000 and ∼180,000, respectively. Complex impedance (Z*) and modulus (M*) spectroscopy revealed that the capacitance (C) and resistivity (ρ) values of grain boundary in all samples are much higher than those of grains.
We report a significant improvement in the electrical properties of CaCu3Ti4O12 (CCTO) dielectrics by the BaTiO3 (BTO) additive. The addition of BTO to CCTO was performed using two different methods of a solid-state mixing and a sol-gel coating. Compared with pure CCTO ceramics (εr ∼ 52,000 and tanδ ∼ 0.38 at 100 kHz), BTO-added CCTO samples commonly showed a large improvement in the dielectric loss property although their dielectric constants were depressed around one order of magnitude; εr ∼ 5900 and tanδ ∼0.05 for 5 mol% BTO-coated CCTO sample and εr ∼ 4,075 and tanδ ∼ 0.02 for 5 mol% BTO-mixed CCTO sample. In addition, BTO-coated CCTO samples showed relatively lower leakage current than those of BTO-mixed CCTO samples, implying that the sol-gel coating is more effective for improving the electrical properties of CCTO.
We investigated microstructures, compositional distributions, and electrical properties of dielectric CaCu3Ti4O12 (CCTO) thin films deposited on Pt/TiO2/SiO2/Si substrates from 700 to 800 °C by pulsed laser deposition. With increasing the deposition temperature from 700 to 750 °C, the dielectric constants (εr) of CCTO films were greatly enhanced from ∼300 to ∼2000 at 10 kHz, respectively. However, the εr values of CCTO films were gradually decreased above 750 °C, which was surely attributable to the formation of a TiO2-rich dead layer at the interface between CCTO and Pt electrode. Compositional analyses by Auger electron spectroscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy revealed that the TiO2-rich dead layer became thicker because of severe Cu diffusion from CCTO films to Pt electrode. The leakage current behaviors of CCTO films are in good agreement with Poole–Frenkel conduction mechanism, where both the TiO2-rich dead layer and rutile TiO2 nanocrystalline particles are considered to play a role of charge trapping centers.
Metal organic deposition (MOD) is one of the attractive processes for coated conductor applications because it is a non-vacuum cost-effective process. Many research groups have successfully fabricated high-JC YBCO coated conductor on the RABiTS and IBAD-YSZ or GZO template with the MOD process. Reports on MOD-processed YBCO coated conductors prepared on the IBAD-MgO template, however, are hardly found. The precursor solution was coated on the CeO2 capped IBAD-MgO template using the slot-die coating method, calcined at a temperature of 550oC, and fired at high temperatures for 2 h 30 min in a reduced oxygen atmosphere. Optimal processing resulted in YBCO coated conductors exhibiting JC value of 0.75 MA/cm2 at 77 K in self-field. The JC values of YBCO coated conductors were found very sensitive to their microstructure, critical temperature, and in-plane texture.
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