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Our understanding of ice algal responses to the recent changes in Arctic sea ice is impeded by limited field observations. In the present study, environmental characteristics of the landfast sea-ice zone as well as primary production and macromolecular composition of ice algae and phytoplankton were studied in the Kitikmeot Sea near Cambridge Bay in spring 2017. Averaged total chlorophyll-a (Chl-a) concentration was within the lower range reported previously for the same region, while daily carbon uptake rates of bottom-ice algae were significantly lower in this study than previously reported for the Arctic. Based on various indicators, the region's low nutrient concentrations appear to limit carbon uptake rates and associated accumulation of bottom-ice algal biomass. Furthermore, the lipids-dominant biochemical composition of bottom-ice algae suggests strong nutrient limitation relative to the distinctly different carbohydrates-dominant composition of phytoplankton. Together, the results confirm strong nitrate limitation of the local marine system.
It is controversial whether Borna disease virus (BDV) infects humans and causes psychiatric disorders.
The relationship between BDV infection and schizophrenia with deficit syndrome was investigated.
Using the Schedule for the Deficit Syndrome, 62 schizophrenic in-patients were selected from three psychiatric hospitals. RNA was extracted from peripheral blood mononuclear cells and analyzed using nested reverse transcriptase-polymerase chain reaction with primers to detect BDV p24 and p40.
Results and conclusions:
BDV transcripts were not detected in samples from any of the 62 schizophrenic patients. These data do not support an etiologic association between BDV infection and the deficit form of schizophrenia.
The incidence of restless legs syndrome (RLS) is presumed to be higher among people with schizophrenia who take antipsychotic medication, most of which blocks the dopamine D2 receptor. The purpose of this study was to determine whether the G-protein β3 subunit (GNB3) C825T polymorphism is associated with antipsychotic-induced RLS in schizophrenia.
We examined 178 Korean patients with schizophrenia. All of the subjects were evaluated using the diagnostic criteria of the International Restless Legs Syndrome Study Group and the International Restless Legs Scale. Genotyping was performed for the C825T polymorphism in the GNB3 gene.
The genotype distribution did not differ significantly between antipsychotic-induced RLS patients and patients who had no-RLS symptoms (χ2 = 4.30, p = 0.116). The genotypes of the C825T single-nucleotide polymorphism (SNP) were classified into two groups: C+ (CC and CT genotypes) and C– (TT genotype). The presence of the C allele (C+) was associated with an increased likelihood of RLS (χ2 = 4.14, p = 0.042; odds ratio = 2.56, 95% confidence interval = 1.02–6.47).
These results suggest that the GNB3 C825T SNP is associated with RLS in schizophrenia. However, confirming this association requires future larger scale studies in which the effects of medication are strictly controlled.
As the conventional atomic force microscopy (AFM) uses a Cartesian coordinate system to scan sample and the probe has different characteristics in each direction, it is impossible to scan in arbitrary direction. Therefore, we present the AFM which is able to rotate its probe. The deflection of cantilever was measured using optical pickup head of DVD drive. For verifying the system feasibility, the multidirectional scanning of the standard sample was carried out. Also we presented the modified structure which includes aligner and mirror to enhance the performance.
Objectives: The aim of this study was to systematically assess the long-term (≥ 6 months) benefits of epidural steroid injection therapies for patients with low back pain.
Methods: We identified randomized controlled trials by database searches up to October 2011 and by additional hand searches without language restrictions. Randomized controlled trials on the effects of epidurals for low back pain with follow-up for at least 6 months were included. Outcomes considered were pain relief, functional improvement in 6 to 12 months after epidural steroid injection treatment and the number of patients who underwent subsequent surgery. Meta-analysis was performed using a random-effects model.
Results: Twenty-nine articles were selected. The meta-analysis suggested that a significant treatment effect on pain was noted at 6 months of follow-up (weighted mean difference [WMD], −0.41; 95 percent confidence interval [CI], −0.66 to −0.16), but was no longer statistically significant after adjusting for the baseline pain score (WMD, −0.19; 95 percent CI, −0.61 to 0.24). Epidural steroid injection did not improve back-specific disability more than a placebo or other procedure. Epidural steroid injection did not significantly decrease the number of patients who underwent subsequent surgery compared with a placebo or other treatments (relative risk, 1.02; 95 percent CI, 0.83 to 1.24).
Conclusions: A long-term benefit of epidural steroid injections for low back pain was not suggested at 6 months or longer. Introduction of selection bias in the majority of injection studies seems apparent. Baseline adjustment is essential when we evaluate pain as a main outcome of injection therapy.
The liquid phase plasma reduction method has been applied to prepare silver nanoparticles from a solution of silver nitrate (AgNO3) using a bipolar pulsed electrical discharge system. The excited states of atomic silver, hydrogen and oxygen as well as the molecular bands of hydroxyl radicals were detected in the emission spectra. As the discharge duration increased up to 10 min, silver particle peaks produced by surface plasmon absorption were observed around 430 nm. Both the particle size and the particle numbers were observed to increase with the length of the plasma treatment time and with the initial AgNO3 concentration. Spherical nanoparticles of about 5–20 nm in size were obtained with the discharging time of 5 min, whereas aggregates of nanoparticles of about 10–50 nm in size were mainly produced with the discharging time of 20 min. The cationic surfactant of cetyltrimethylammonium bromide (CTAB) added with the CTAB/AgNO3 molar ratio of 30% was shown to inhibit nanoparticle aggregation.
A fundamental challenge in solar-thermal-electrical energy conversion is the thermal stability of materials and devices at high operational temperatures. This study focuses on the thermal stability of selective emitters for solar thermophotovoltaic (STPV) systems to enhance the conversion efficiency. 2-D photonic crystals are periodic micro/nano-scale structures that are designed to affect the motion of photons at certain wavelengths. The structured patterns, however, lose their structural integrity at high temperature, which disrupts the tight tolerances required for spectral control of the thermal emitters. Through analytical studies and experimental observations, the four major mechanisms of thermal degradation of 2-D photonic crystal are identified: oxidation, grain growth and re-crystallization, surface diffusion, and evaporation and re-condensation. In this work, the design of a flat surface photonic crystal (FSPC) is proposed and experimental validations are performed.
Based on biophysical ice-core data collected in the landfast ice off Barrow, Alaska, USA, in 2002 and 2003, a one-dimensional ice–ocean ecosystem model was developed to determine the factors controlling the bottom-ice algal community. The data and model results revealed a three-stage ice-algal bloom: (1) onset and early slow growth stage before mid-March, when growth is limited by light; (2) fast growth stage with increased light and sufficient nutrients; and (3) decline stage after late May as ice algae are flushed out of the ice bottom. Stages 2 and 3 are either separated by a transition period as in 2002 or directly connected by ice melting as in 2003, when in situ light and nutrient enrichment experiments showed only light limitations. The modeled net primary production of ice algae (NPPAi) from March to June is 1.2 and 1.7 g Cm–2 for 2002 and 2003, respectively, within the range of previous observations. Model sensitivity studies found that overall NPPAi increased almost proportionally to the initial nutrient concentrations in the water column. A phytoplankton bloom (if it occurs as in 2002) would compete with ice algae for nutrients and lead to reduced NPPAi. About 45% of the NPPAi was exported to the shallow benthos.
Due to a rapid shrinkage in memory devices, backned of the line process experiences great difficulties, especially Al metallization. Furthermore, there is a continuous demands in low line resistance in order to promote device performances. In this article, Al damascene process is proposed as compared to Al patterning process, which suffers from inherent pattering issue at a fine pitch under 70nm. The most difficulties in the development of Al damascene process were to form a stable and void free Al in fine trench and to obtain scratch and corrosions free Al surface. In this study, 50nm beyond fill was successfully achieved by “bottom up growth” of CVD Al. For the process, CVD Al by using Methylpyrroridine Alane (MPA) precursor was deposited on a stacked film of CVD TiN and PVD TiN as a wetting layer, which was followed by PVD Al and reflow, then the Al surface was polished with colloidal silica based slurry.
In addition, electrical property of Al scheme and W scheme was compared with damascene pattern, along with which we demonstrated that around 36% decrease in parasitic capacitance is achievable by decrease of metal line height from 3500A to 1000A on simulation test implying that device performance could be enhanced.
We have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.
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