13 results
Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1693 / 2014
- Published online by Cambridge University Press:
- 10 June 2014, mrss14-1693-dd01-03
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- 2014
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Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h04-14
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- 2012
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Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1090 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1090-Z05-24
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- 2008
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Lateral/vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D05-02
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- 2008
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Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-20
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- 2008
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Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B08-03
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- 2006
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Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.32
- Print publication:
- 2004
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Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y3.7
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- 2003
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Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K5.2
- Print publication:
- 2002
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Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K3.8
- Print publication:
- 2002
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Material System for Packaging 500°C SiC Microsystems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 682 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, N4.3
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- 2001
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Silicon Carbide Die Attach Scheme for 500°C Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T8.10.1
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- 2000
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Surface And Interface Study Of Pdcr/Sic Schottky Diode Gas Sensor Annealed At 425°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 259
- Print publication:
- 1997
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