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Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces

Published online by Cambridge University Press:  01 February 2011

Mark E. Twigg ,
Yoosuf N. Picard ,
Joshua D. Caldwell ,
Charles R. Eddy ,
Philip G. Neudeck ,
Andrew J. Trunek  and
J. Anthony Powell
Mark E. Twigg
Affiliation:
twigg@estd.nrl.navy.mil, Naval Research Laboratory, Code 6812, 4555 Overlook Ave., SW, Washington, DC, 20375, United States, (202) 404-8543, (202) 404-7194
Yoosuf N. Picard
Affiliation:
yoosuf.picard@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375, United States
Joshua D. Caldwell
Affiliation:
josh.caldwell@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375, United States
Charles R. Eddy
Affiliation:
eddy@estd.nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375, United States
Philip G. Neudeck
Affiliation:
Philip.G.Neudeck@nasa.gov, NASA Glenn Research Center, Cleveland, OH, 44315, United States
Andrew J. Trunek
Affiliation:
andrew.j.trunek@nasa.gov, OAI, Cleveland, OH, 44315, United States
J. Anthony Powell
Affiliation:
japowell@ieee.org, Sest, Inc., Cleveland, OH, 44315, United States
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Abstract

The interpretation of ECCI images in the forescattered geometry presents a more complex diffraction configuration than that encountered in the backscattered geometry. Determining the Kikuchi line that is the primary source of image intensity often requires more than simple inspection of the electron-channeling pattern. This problem can be addressed, however, by comparing recorded ECCI images of threading screw dislocations in 4H-SiC with simulated images. An ECCI image of this dislocation is found to give the orientation of the dominant Kikuchi line, greatly simplifying the determination of the diffraction simulation. In addition, computed images of threading screw dislocations in 4H-SiC were found to exhibit channeling contrast essentially identical to that obtained experimentally by ECCI and allowing determination of the dislocation Burgers vector.

Keywords

dislocationsscanning electron microscopy (SEM)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-20
Copyright
Copyright © Materials Research Society 2008

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References

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