8 results
Material Properties of GaN in the Context of Electron Devices
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 18-26
- Print publication:
- 1999
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Material Properties of GaN in the Context of Electron Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G1.2
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- 1998
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Effect of Ion Bombardment on the Dopant Diffusion During Reactive Ion Etching (RIE) of Dielectric Films Deposited on Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 128 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 731
- Print publication:
- 1988
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The Effect of Doping on the Grain Structure of As-Deposited and High-Temperature Annealed Lpcvd Wsl2 Films on Polysilicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 138 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 421
- Print publication:
- 1988
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On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 119 / 1988
- Published online by Cambridge University Press:
- 21 February 2011, 177
- Print publication:
- 1988
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Degradation of TiSi2/n+-Polysilicon Interfaces Due to High Temperature Processing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 106 / 1987
- Published online by Cambridge University Press:
- 22 February 2011, 149
- Print publication:
- 1987
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Electrical Characteristics of Tisi2/n+-Polysilicon/Sio2/Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 105 / 1987
- Published online by Cambridge University Press:
- 22 February 2011, 295
- Print publication:
- 1987
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Characterization and Physics of Threshold Voltage Dependence on Defect Related Properties of Channel-Buffer (Substrate) Interfaces in GaAs MESFET's Fabricated By Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 102 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 191
- Print publication:
- 1987
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