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The Effect of Doping on the Grain Structure of As-Deposited and High-Temperature Annealed Lpcvd Wsl2 Films on Polysilicon

Published online by Cambridge University Press:  28 February 2011

N. Lewis ,
K. Shenai ,
G.A. Smith ,
P.A. Piacente  and
B.J. Baliga
N. Lewis
Affiliation:
GE Corporate Research and Development Center, PO Box 8, Schenectady, NY 12301
K. Shenai
Affiliation:
GE Corporate Research and Development Center, PO Box 8, Schenectady, NY 12301
G.A. Smith
Affiliation:
GE Corporate Research and Development Center, PO Box 8, Schenectady, NY 12301
P.A. Piacente
Affiliation:
GE Corporate Research and Development Center, PO Box 8, Schenectady, NY 12301
B.J. Baliga
Affiliation:
GE Corporate Research and Development Center, PO Box 8, Schenectady, NY 12301
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Abstract

In this investigation, we report on detailed microstructural characteristics of LPCVD WSi 2 films deposited on doped/undoped polysilicon and subjected to boron and phosphorus implantation and implant activation at temperatures up to 1100° C. The polysilicon films were doped with phosphorus using a POC13 source to obtain a sheet resistance of ∼ 25 Ω/ and the films were coated with about 300nm of Si rich (Si:W atomic ratio 2.6) LPCVD WSi2. The microstructures of as-deposited and high temperature annealed polycide films were studied in detail using TEM. The electrical sheet resistances were measured using four-point probes. The initial polysilicon doping level, silicide annealing conditions, subsequent implant into the polycide, and implant activation all had profound effects on the microstructural characteristics of both the silicide and polysilicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 421
Copyright
Copyright © Materials Research Society 1989

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