9 results
Dependence of the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys on Oxygen Impurity Levels
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 989 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0989-A04-03
- Print publication:
- 2007
-
- Article
- Export citation
The Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 910 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0910-A02-05
- Print publication:
- 2006
-
- Article
- Export citation
In-situ Observation of Silicon Epitaxy Breakdown with Real-Time Spectroscopic Ellipsometry
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 808 / 2004
- Published online by Cambridge University Press:
- 21 March 2011, A5.1
- Print publication:
- 2004
-
- Article
- Export citation
Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 808 / 2004
- Published online by Cambridge University Press:
- 21 March 2011, A10.10
- Print publication:
- 2004
-
- Article
- Export citation
Time-Resolved Switching Studies in a-Si:H and Related Films
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 762 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A2.4
- Print publication:
- 2003
-
- Article
- Export citation
Comparative Study of Hydrogen Diffusion in Hot-Wire and Glow-Discharge-Deposited a-Si:H
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 557 / 1999
- Published online by Cambridge University Press:
- 15 February 2011, 299
- Print publication:
- 1999
-
- Article
- Export citation
H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 507 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 119
- Print publication:
- 1998
-
- Article
- Export citation
Measurement of Two Deep H Bonding Levels in Device Quality Glow Discharge a-SI:H
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 377 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 413
- Print publication:
- 1995
-
- Article
- Export citation
Experimental Study of Sweep-Out in N-Type Hydrogenated Amorphous Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 113
- Print publication:
- 1987
-
- Article
- Export citation