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In this work, the relationship between the substrate crystallinity and the on-state resistances of silicon carbide (SiC) photoconductive semiconductor switches (PCSSs) was investigated. PCSSs with different channel lengths were fabricated on semi insulating 6H–SiC having different crystal qualities. A method was introduced for determining the photoconductive capacity of the SiC PCSSs. The experimental data suggest that the photoconductive capacity decreases sharply with the degradation of the full width at half maximum of the rocking curve of the 6H–SiC substrates. It is found that increasing the carrier mobility is a key factor for reducing the on-state resistance of the 6H–SiC PCSSs. Moreover, the results in this work present reference for the selection of 6H–SiC substrates for the fabrication of PCSSs and some other photoelectric devices.
Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.
van Mill et al. posed in ‘Classes defined by stars and neighborhood assignments’, Topology Appl.154 (2007), 2127–2134 the following question: Is a star-compact space metrizable if it has a Gδ-diagonal? In this paper, we give a negative answer to this question.
In this paper, a new hydrothermal method—discharging-gas method—is introduced. ZnO acicular particles with the ratio of length and diameter 16: 1 are synthesized by the hydrothermal discharging-gas method using a mixed solution of Zn(CH3COO)2 with NaNO2 as precursor at 190 °C for 1 h. The effects of reaction temperature and precursor concentration on formation of acicular particles are investigated. The results show that the main factor for formation of acicular particles prepared by the hydrothermal discharging-gas method is the extent of crystallinity of ZnO powders before releasing gas.
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