11 results
Sequential Operation of Three Distinct Misfit Dislocation Introduction Mechanisms in an Epitaxial Bilayer Film
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- Journal:
- MRS Online Proceedings Library Archive / Volume 594 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 157
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- 1999
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Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates
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- Journal:
- Journal of Materials Research / Volume 13 / Issue 10 / October 1998
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2791-2799
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- October 1998
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Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface
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- MRS Online Proceedings Library Archive / Volume 535 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 65
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- 1998
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Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface
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- MRS Online Proceedings Library Archive / Volume 500 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 63
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- 1997
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Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems
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- MRS Online Proceedings Library Archive / Volume 448 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 265
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- 1996
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Single Variant Orientational Growth of Yba2Cu3O7-x on Vicinal (011) SrTiO3 Substrates.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 401 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 375
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- 1995
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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide
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- MRS Online Proceedings Library Archive / Volume 403 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 489
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- 1995
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Growth of Si1−xGex, Strained Layers Using Atmospheric-Pressure CVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 285
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- 1991
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Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si
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- Journal of Materials Research / Volume 5 / Issue 9 / September 1990
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1900-1907
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- September 1990
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Determination of the Formation of the 1/6[031] Extrinsic Stacking Faults in Deformed YBa2Cu3O7−δ
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- Journal:
- MRS Online Proceedings Library Archive / Volume 183 / 1990
- Published online by Cambridge University Press:
- 21 February 2011, 375
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- 1990
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The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 623
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- 1987
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